Cross-section micrograph

Figure 8. TEM and optical absorption of the sample implanted with 5 x 10 Au /cm (a) TEM cross-sectional micrograph (dashed lines represent the free surface and film-substrate interface) (b) nanoparticles size distribution (c) simulated optical spectra (1) Au cluster in a non-absorbing medium with n = 1.6 (2) Au cluster in polyimide (absorbing) (3) Au(core)-C(shell) cluster in a nonabsorbing medium with n = 1.6 (4) the experimental spectrum of Au-implanted polyimide sample, (d) X-ray diffraction patterns as a function of the implantation fiuence.

Figure 13. Bright-held TEM cross-sectional micrograph of the sample AU3CU3 H (annealing in H2 (4%)-N2 atmosphere at 900 °C for 1 h) before (a) and after irradiation at room temperature with 190 keV Ne ions, at a huence of 1 x lO ions/cm (b). In (c) the satellitelike topology of the clusters is shown at higher magnihcation (Reprinted from Ref. [1], with permission from SIF.)...

FIG U RE 6.4 SEM cross-sectional micrograph of an SOFC, showing an anode support layer, anode functional layer, electrolyte, and cathode [24]. Reprinted from [24] with permission from Elsevier. 

FIGURE 6.12 Siemens Westinghouse SOFC cross-sectional micrograph, showing a dense YSZ electrolyte deposited by EVD [48]. Reprinted from [48] with permission from Elsevier. 

Fig. 10.14 TEM cross-sectional micrograph of a one-dimensional porosity superlattice. Anodization was performed on a periodically p-doped substrate (75 nm of 1017 citT3, 75 nm of 1019 crrT3) using a current density of... 

Figure 15.30. Cross-section micrograph of the buried waveguide.

Fig. 7.5. High-resolution TEM cross section micrograph of a nominally undoped ZnO thin film on c-plane sapphire, PLD grown at 0.05 mbar O2 and 700°C. The SAD pattern is taken from both film and substrate area. Images by G. Wagner, Leipzig...

Fig. 6 Bright field TEM cross section micrographs of a film processed in conditions A2. Grains are shown near the substrate (lower part) and the surface (upper part).

Figure 3. Cross-sectional micrographs (a) microstructures with alternative regions of A1 and porous AI2O3 obtained after localized porous-type anodization, (b) trapezoidal metallic features obtained after chemical etching of porous AI2O3. Two while arrows show the depth of microgrooves (D) and undercut (U).

Figure 3. (a) IR spectra obtained from two diamond/p-SiC nanocomposite films deposited on W substrates by using different TMS flow rates. The transverse optical phonon band around 800 cm corresponds to the presence of p-SiC. (b) Backscattered electron cross-sectional micrograph of a gradient natured diamond/p-SiC nanocomposite film deposited on BEN pre-treated (100) Si substrate. The bright spots indicate p-SiC phase. 

Figure 1. Cross-sectional micrographs of the YSZ films on Si(lOO) deposited at a substrate temperature of about 1180 °C, substrate to nozzle distance of 5lmm, flow rates of oxygen and liquidfuel of1600 and 2.0 cm /min, respectively, and at reagent concentrations of a) 1.25> ia b) 2.0xia c) 2.75x10- d) 3.5x10 e) 4.25xia f) 5.0x10 M, for 20 min.

Fig. 6 shows the cross-sectional micrographs of some of the samples. In Fig. 6 (a), film is in columnar structure. When the applied DC voltage exceeded 700 V, forest-like microstructure was observed in the films as shown in Fig. 6 (b), (c) and (d). 

Figure 6. Cross-sectional micrographs of the films deposited on Si(lOO) substrates for 20 min at the condition of reagent concentration of 2.75 flow rates of oxygen and liquidfuel of...

Figure 7. Cross-sectional micrographs of the annealedfilms at 1250 °C for 2 hrs. a) The same sample as shown in Figure 6 (a), b) the same sample as shown in Figure 6 (d).

Figure 10.3 Cross-section micrographs of (a) a high-activity aiuminide coating (after anneaiing) and (b) a iow-activity aiuminide coating on a nickel-base superalloy. (These micrographs originally appeared in G. W. Goward and D. H. Boone, Oxid. Met., 3 (1971), 475, and are reproduced with the kind permission of Springer Science and Business Media.)...

Physical Vapor Deposition (PVD), Fig. 5 SEM cross section micrographs of (a) a Ti35A165N fine-grained coating, (b) a Y-AI2O3 coating on a TiAlN film, and... 

ESEM cross-section micrographs of samples grown on the seed layer annealed at 853 K at repetition rate of 0.1 Hz. 

Fig. 1.17 Cross-sectional micrographs of a phloem fibre cap in a vascular bundle of a bamboo culm, (a) Optical micrograph of a fibre cap. (b)-(d) AFM phase images of bamboo fibres. (e)-(j) AFM phase images of the nanoscale structure in the fibre cell wall [49]...

Figure 17.14 SEM cross-sectional micrographs of various stack zones after stack testing (a) interdiffusion between Cro-fer22APU interconnect and metallic Ni mesh (b) sealing situation between interconnect.

Fig. 28.11 TEM cross-section micrographs of SnO films deposited by spray pyrolysis (a) grained structure, T =330-350 °C, d=10-80 nm (b, c) columnar structure, (b) T =475 °C, d=300 nm, (c) T =510 °C, d=75-100 nm (iCeprinted with permission from Korotcenkov et al. 2005b, Copyright 2005 Elsevier)...

Fig. 27a-b represents the SEM micrographs taken from the surface and the cross-section of the 0.90Te02-0.10W03 sample heat-treated at 410 °C, above the first crystallization onset temperature, respectively. Fig. 27a exhibits the presence of dendritic leaf-like crystallites differently oriented on the surface. However, in the cross-sectional micrograph (see Fig. 27b), a typical amorphous structure without any crystallization on bulk structure can be clearly observed following the crystallites on the surface. Based on the SEM investigations, it was determined that the crystallites formed on the surface and did not diffuse into the bulk structure proving the surface crystallization mechanism (Qelikbilek et al., 2011). 

FIGURE 7. Cross-section micrograph of a CAA oxide after TAA pretreatment. Note the thick, porous, CAA-induced oxide under the thin, smooth, TAA oxide film. 

FIGURE 45.4 Cross-sectional micrograph of SAC EGA solder ball bonded to a silver surface finished PWB bond pad. Planar voids are clearly evident in the section and in the magnified inset. Voids in close adjacency above the intermetallic layer and the BGA ball can significantly detract from the solder-joint strength. (Courtesy of Hewlett-Packard). 

FIGURE 47.21 Cross-sectional micrograph showing pin-in-paste buried intrusive soldering. Note that very little solder has drained. 

Fig. 3.22. A cross-sectional micrograph showing a four-level damascene copper line structure, where the lines appear as white regions. The silicon oxide passivation layers, Pi,. .., P4, are deposited on eaoh level of metallization. The dark regions in the figure are the silicon oxide trenches and passivation layers. The thickness, width and spacing of the Cu lines and the surrounding oxide trenches in each metallization level and the thickness of the passivation layers separating different levels of metallization are all 1 jim. Note that the Gu lines in levels Mi and M3 are oriented along the y—direction whereas those in levels M2 and M4 are parallel to the x—direction. (Photograph courtesy of International Business Machines Corporation. Reprinted with permission.)...

Fig. 5.1. A cross-sectional micrograph of an electron-beam physical vapor deposited yttria-stablized zirconia film which is partially delaminated from the nickel-base superalloy substrate. This ceramic layer and the interlayers comprising the bond-coat and thermally grown oxide serve as the thermal-barrier coating system in gas turbine engines, as described in Section 1.2.4. Reproduced with permission from Padture et al. (2002).

The transition from the internal to external formation of a protective scale typically occurs after a relatively small increase in the alloy content of the protective-scaleforming element. For instance. Fig. 5-17 compares the cross-sectional micrographs... 

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