Conduction OFETs

Using naphthalenetetracarboxylic dianhydride as the semiconductor, changes in bulk conductivity, field-effect mobility, and threshold voltage were separately observed in response to exposure to water and oxygen [35, 36], Another more elaborate kind of pattern was produced by a virtual array of eleven different semiconductor OFET monitoring on-current in response to polar and nonpolar organic vapors [37]. Responses (0.8-0.3-fold reductions and 1.5-2-fold increases) were dis-... 

Langmuir-Blodgett (LB) technique has been also used for the preparation of Pc-based OFET, as it allows the fine control of both the structure and the thickness of the film at the molecular level [226,227], OFET devices based on amphiphilic tris(phthalocyaninato) rare earth, triple-decker complexes have been prepared by LB technique, showing good OFET performances [228], More recently, ambipolar transport has also been realized in OFET devices through a combination of holeconducting CuPc and n-conducting Cgo fullerene, in which the asymmetry of the... 

In order to co-polymerize the IC unit, Suzuki and Stille polymerizations have been used. First, Blouin et al. [94] were able to obtain polyindolo[3,2-fr]-carbazole derivatives with bithiophene or biEDOT as co-monomers. Unfortunately, these studies demonstrated a relatively low oxidation potential for these polymers (especially for P35 and P37), limiting their applications in OFETs and PCs. However, for doped state applications, these polymers may exhibit interesting properties [35]. For instance, when copolymerized with bithiophene, the resulting copolymer shows a good electrical conductivity (as high as 0.7 Scm 1) but a low Seebeck coefficient of 4.3 iV K 1 [35]. Finally, the UV-Vis absorption maxima are similar for poly(2,8-indolocarbazole-a/f-bithiophene) and poly(2,8-indolocarbazole-a/f-bis(3,4-ethylenedioxythiophene)). A broad absorption band is centered at 430 nm whereas, for the 3- and 9-substituted copolymers, the broad band is centered around 490-500 nm [94],... 

In order to rule out an improved deviee performance due to heat indueed morphological changes, the following experiment was conducted. A p-type pentacene OFET without Ca passivation and Au source-drain contacts was annealed at T = 160 °C for t = 1 h, in an inert nitrogen atmosphere. Even though... 

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