Completeness of deposition

The overpotential at the anode or cathode is a function of the following variables. 

The nature and the physical state of the metal employed for the electrodes. The fact that reactions involving gas evolution usually require less overpotential at platinised than at polished platinum electrodes is due to the much larger effective area of the platinised electrode and thus the smaller current density at a given electrolysis current. 

The physical state of the substance deposited. If it is a metal, the overpotential is usually small if it is a gas, such as oxygen or hydrogen, the overpotential is relatively great. 

The current density employed. For current densities up to 0.01 A cm-2, the increase in overpotential is very rapid above this figure the increase in overpotential continues, but less rapidly. 

The change in concentration, or the concentration gradient, existing in the immediate vicinity of the electrodes as this increases, the overpotential rises. 

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Complementary colours 660 Completeness of deposition 507 Completeness of precipitation 418 Complexation 51... 

This conclusion is proved by the element analysis of sensors which have registered more than 30 portions of silver emitted from the surface of substrate after completion of deposition of silver on its surface. The experiments on local analysis of tiie sensor indicated that such sensor has areas containing up to 0.3 wt.% of silver in 1 pm. The total amount of silver atoms incident on sensor was 7-10. This means that silver atoms get deposited on the surface of the sensor inhomogeneously, being localized close to defect allocation area which made it possible to detect... 

We heated the substrate of zinc oxide containing 10 cm 2 of silver atoms (in this case there was already no emission after completion of deposition) at 300 C. Such thermal treatment results in formation of microcrystals, rather than evaporation adatoms on the surface of the substrate made of zinc oxide. In paper [34] it was shown that microcrystals with diameter 100 A deposited on the zinc oxide surface are acceptors of electrons, therefore the formation of microcrystals results in increase of resistivity of a sensor substrate above the initial value (prior to silver deposition). In this case the initial value of the resistance of sensor-substrate was 2.1 MOhm, after adsorption of silver atoms it became 700 kOhm, and as a result of heating at 300°C and formation of microcrystals - acceptors of electrons it in increased up to 12 MOhm. If such a substrate is subject to deposition of 3-10 5 cjjj-2 silver again, then emission of silver atoms gets detected. From the change of resistivity of sensor-detector due to deposition of silver atoms one can conclude that in this case the emission of atoms is 4 times as low than in experiment with pure substrate made of zinc oxide, which confirms the supposition made on the mechanism of emission of adatoms. 

Completion of deposition and characterisation equipment for ultrafast screening of new electrochemical materials (combinatorial chemistry) - the USA. 

The completeness of deposition often can be judged from the magnitude of the electrolytic current. In some practical cases the current no longer decreases after a certain low level has been reached. This residual current is due to traces of extraneous reducible material such as oxygen or to a slow discharge of hydrogen. In such cases, electrolysis is carried out until the current has ceased to diminish for several minutes. 

Once all the copper is electroplated, concentrated ammonia is added to the remaining solution (iron if present is precipitated as its hydrated oxide and removed by filtration) and nickel is plated on another cathode at 4 A and 3—4 V. The test for completeness of deposition is carried out either by adding water and continuing the electrolysis or by testing with di-methylglyoxime. 

In an alternative procedure (84), the electrolyte is pumped through the cells at such a rate that the outlet concentration is 50 g/L MnSO and 67 g/L H2SO4. This spent electrolyte is then mixed with equal parts of make-up solution containing 150 g/L MnSO and the mixture returned to the electrolysis step. The electrolysis is continued over a period of days and terrninated when the EMD layer deposited on the anode reaches a specific thickness, usually on the order of 1—3 or 6—8 mm. Following completion of the electrolysis cycle, the entire electrode assembly is removed from the cell for removal of the deposited EMD, either manually or by an automated system (85). The product is repeatedly washed with water to extract the occluded acid (83) and dried at about 85°C in air. 

Dye Developers. In addition to having suitable diffusion properties, dye developers must be stable and inert in the negative before processing. After completion of the process, the dye developer deposited in the image-receiving layer must have suitable spectral absorption characteristics and stabiUty to light. 

When a ledge is formed on an atomically smooth monolayer during tire formation of a thin film the intensity of the diffraction pattern is reduced due to the reduction in the beatrr intensity by inelastic scattering of electrons at the ledge-monolayer junction. The diffraction intensity catr thus be used during deposition of several monolayers to indicate the completion of a monolayer through the relative increase in intensity at tlris time. Observation of this effect of intensity oscillation is used in practice to count the number of monolayers which are laid down during a deposition process. 

In the secondary nucleation stage, the remaining amorphous portions of the molecule begin to grow in the chain direction. This is schematically shown in Fig. 16. At first, nucleation with the nucleus thickness /i takes place in the chain direction and after completion of the lateral deposition, the next nucleation with the thickness k takes place, and this process is repeated over and over. The same surface nucleation rate equation as the primary stage can be used to describe these nucleation processes. 

Although the Langelier index is probably the most frequently quoted measure of a water s corrosivity, it is at best a not very reliable guide. All that the index can do, and all that its author claimed for it is to provide an indication of a water s thermodynamic tendency to precipitate calcium carbonate. It cannot indicate if sufficient material will be deposited to completely cover all exposed metal surfaces consequently a very soft water can have a strongly positive index but still be corrosive. Similarly the index cannot take into account if the precipitate will be in the appropriate physical form, i.e. a semi-amorphous egg-shell like deposit that spreads uniformly over all the exposed surfaces rather than forming isolated crystals at a limited number of nucleation sites. The egg-shell type of deposit has been shown to be associated with the presence of organic material which affects the growth mechanism of the calcium carbonate crystals . Where a substantial and stable deposit is produced on a metal surface, this is an effective anticorrosion barrier and forms the basis of a chemical treatment to protect water pipes . However, the conditions required for such a process are not likely to arise with any natural waters. 

Make the connections to the polarographic analyser and adjust the applied voltage to —0.8 V, i.e. a value well in excess of the deposition potential of lead ions. Set the stirrer in motion noting the setting of the speed controller, and after 15-20 seconds, switch on the electrolysis current and at the same time start a stopclock allow electrolysis to proceed for 5 minutes. On completion of the electrolysis time, turn off the stirrer, but leave the electrolysis potential applied to the cell. After 30 seconds to allow the liquid to become quiescent, replace the electrolysis current by the pulsed stripping potential and set the chart recorder in motion. When the lead peak at ca 0.5 V has been passed, turn... 

Deposit character of, (eg) 509 Deposition completeness of, 507 potentials of metals, 508 Derivative spectrofluorimetry 733 Derivative spectrophotometry 668 Derivatisation in chromatography, gas, 236 liquid, 228 in fluorimetry, 735 Desiccants 99 Desiccators 98 cooling of crucible in, 100 desiccants for, 99 Scheibler type, 99 uses of, 100 vacuum, 100... 

Electrical units 503, 519 Electrification due to wiping 77 Electro-analysis see Electrolysis and Electrogravimetry Electrochemical series 63 Electro-deposition completeness of, 507 Electrode potentials 60 change of during titration, 360 Nernst equation of, 60 reversible, 63 standard 60, (T) 62 Electrode reactions 505 Electrodeless discharge lamps 790 Electrodes antimony, 555 auxiliary, 538, 545 bimetallic, 575... 

In many cases, a more complete understanding of CVD reactions and a better prediction of the results are needed and a more thorough thermodynamic and kinetic investigation is necessary. This is accomplished by the calculation of the thermodynamic equilibrium of a CVD system, which will provide useful information on the characteristics and behavior of the reaction, including the optimum range of deposition conditions. 

The deposition takes place from HTeOs and cadmium-EDTA complex solutions at a potential whereat, whilst Te is deposited from HTeOs under a diffusion-limited condition, the Cd-EDTA complex ion is not reduced to metallic Cd. The first step is the dark deposition of one monolayer of elemental Te on the p-Si substrate (Fig. 4.11a, i). After completion of this step, as specified by measuring the charge passed, the electrode is illuminated by light with energy higher than the band gap energy of silicon for a limited time. Then conduction band electrons are... 

During this process, material is selectively removed from the wafer surface as defined by the patterned photoresist in order to define the structure of the previously deposited layer. The etching process is accomplished by exposing the wafer to a plasma, which both chemically reacts with the material to be removed and ph3rslcally ablates it. At the completion of etching, the remaining photoresist is cleared from the wafer. 

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