Chemomechanical polishing

Larsen-Basse, J. and Liang, H., Probable Role of Abrasion in Chemomechanical Polishing of Tungsten," Wear, Vol. 233-... 

CMOS complementary metal oxide semiconductor CMP chemomechanical polishing... 

Chemomechanical polishing, which combines mechanical abrasion and chemical etching, is a basic processing technology for the production of flat, defect-free reflective surfaces [215], The polishing proceeds by a combination of... 

For further processing, the surface is polished by CMP (chemomechanical polishing). Stepper lithography with very high resolution can be performed on the resulting mirror-like surface. 

Previous measurements of the oligoclase-water interface with low-resolution X-ray reflectivity (Farquhar et al. 1999) reported the rapid (< 30 min) formation of a 32 A-thick, Na-depleted layer at a chemomechanically polished oligoclase (001) surface in contact with deionized water. A -depleted layer as thick as that inferred by Farquhar et al. (1999) is inconsistent with our data, as can be seen for the calculation of an orthoclase surface identical to the best-fit structure described above (solid line, Fig. 20A), except for the absence of K+ ions in the outermost 32 A (dashed line, Fig. 20A). 

Fig. tr.1-157 ZnS, cubic. Dielectric-function spectrum e E), measured by spectroscopic ellipsometry at 300 K after chemomechanical polishing of the sample (circles). The solid lines show values calculated from a model dielectric function for interband critical points. The dashed lines represent the best-fit standard critical-point lineshapes [1.132]... 

L. Zhou, V. Audurier, P. Pirouz, J.A. PoweU, Chemomechanical polishing of silicon carbide, J. Electrochem. Soc. 144 (1997) L161—L163. 

Pietsch, G.J., Higashi, G.S., Chabal, Y.J., 1994. Chemomechanical polishing of silicon surface termination and mechanism of removal. Appl. Phys. Lett. 64, 3115. 

One of the modifications of this approach is the use of a combination of mechanical and chemomechanical polishing, for instance, by simultaneous action of abrasive and bromine-methanol for lenses in Ge, CdTe, and InP [126]. 

The second sacrificial PSG layer, Oxide2, is deposited and chemomechanically polished (CMP) to remove undesired topography resulting from features etched in the underlying layers, greatly improving the surface finish of the final polysilicon mirror layer. 

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