Chemical vapour deposition oxide

The alkoxides and aryloxides, particularly of yttrium have excited recent interest. This is because of their potential use in the production of electronic and ceramic materials,in particular high temperature superconductors, by the deposition of pure oxides (metallo-organic chemical vapour deposition, MOCVD). They are moisture sensitive but mostly polymeric and involatile and so attempts have been made to inhibit polymerization and produce the required volatility by using bulky alkoxide ligands. M(OR)3, R = 2,6-di-terr-butyl-4-methylphenoxide, are indeed 3-coordinate (pyramidal) monomers but still not sufficiently volatile. More success has been achieved with fluorinated alkoxides, prepared by reacting the parent alcohols with the metal tris-(bis-trimethylsilylamides) ... 

The largest uses of platinum group metals in electronics are ruthenium for resistors and palladium for multilayer capacitors, both applied by thick film techniques . Most anodes for brine electrolysis are coated with mixed ruthenium and titanium oxide by thermal decomposition . Chemical vapour deposition of ruthenium was patented for use on cutting tools . 

An example of this process of data analysis is provided by the work of Yubero et al. (2000), who studied the structure of iron oxide thin films prepared at room temperature by ion beam induced chemical vapour deposition. Such films find important applications because of their optical, magnetic, or magneto-optical properties. They were produced by bombardment of a substrate with Oj or Oj + Ar+ mixtures, and Figure 4.15 shows RBS spectra of two iron oxide thin films prepared on a Si substrate by each of these bombardment methods. 

Gonzalez-Elipe, A.R. (2000 a) Iron oxide thin films prepared by ion beam induced chemical vapour depositions. Structural characterization by infrared spectroscopy. J. Vac. 

The dominant class of lustre pigments is based upon oxide coatings of mica platelets, but newer materials have appeared e.g. silica and alumina flakes from Merck, with better performance characteristics than traditional mica." " There has also been developments in the technology for the coating of reflective metal platelets, e.g. aluminium, with oxides using chemical vapour deposition that has led to exciting new products. ... 

Jones AC (2002) Molecular design of improved precimsors for the MOCVD of electroceramic oxides. Journal of Materials Chemistry 12(9), 2576-2590 Jones AC, Chalker PR (2003) Some recent developments in the chemical vapour deposition of electroceramic oxides. Journal of Physics D-Applied Physics 36(6), R80-R95 Kammler HK, Madler L, et al (2001) Flame synthesis of nanoparticles. Chemical Engineering Technology 24(6), 583-596... 

Fig. 13.20. Optical heterodyne force microscopy (OHFM) and its application to a copper strip of width 500 nm, thickness 350 nm, on a silicon substrate, with subsequent chemical vapour deposition (CVD) of a silicon oxide layer followed by polishing and evaporation of a chromium layer of uniform thickness 100 nm and flatness better than 10 nm (a) amplitude (b) phase 2.5 [im x 2.5 m. Ultrasonic vibration at fi = 4.190 MHz was applied to the cantilever light of wavelength 830 nm was chopped at fo = 4.193 MHz and focused through the tip to a spot of diameter 2 im with incident mean power 0.5 mW the cantilever resonant frequency was 38 kHz. The non-linear tip-sample interaction generates vibrations of the cantilever at the difference frequency f2 — f = 3 kHz (Tomoda et al. 2003).

Carbides and nitrides can be prepared in many ways (chemical vapour deposition, physical vapour deposition, precipitation of salts containing metal, carbon and oxygen followed by reduction and annealing, reaction of a metal or its oxides with a gas or with solid carbon). Carbides and nitrides are often nonstoichiometric with complex phase diagrams.4-9 The compounds sometimes contain multiple phases and impurities, notably oxygen. This can lead to even more complex compounds, like oxycarbides, carbonitrides or oxycarbonitrides. 

The rapid development of solid state physics and technology during the last fifteen years has resulted in intensive studies of the application of plasma to thin film preparation and crystal growth The subjects included the use of the well known sputtering technique, chemical vapour deposition ( CVD ) of the solid in the plasma, as well as the direct oxidation and nitridation of solid surfaces by the plasma. The latter process, called plasma anodization 10, has found application in the preparation of thin oxide films of metals and semiconductors. One interesting use of this technique is the fabrication of complementary MOS devices11. Thin films of oxides, nitrides and organic polymers can also be prepared by plasma CVD. 

Halary, E., Benvenuti, G., Wagner, F. and Hoffmann, P. (2000). Light induced chemical vapour deposition of titanium oxide thin films at room temperature. Appl. Surf. Sci. 154, 146-151. 

Ce(R CO.CH.CO.R )3 are readily oxidized (O2) to Ce(R CO.CH.CO.R )4, such as Ce(acac)4(R = R = Me), Ce(dbm)4(R = R = Ph), and Ce(tmhd)4 (R = R = Mc3C), generally found to have square antiprismatic structures, though Ce(tmhd)4 is closer to dodecahedral. These are volatile dark red solids that are soluble in solvents such as benzene and chloroform they are volatile, with vapour pressures high enough for Metal Organic Chemical Vapour Deposition (MOCVD) use, whilst they have also been studied as possible alternatives to lead compounds for petrol additives. 

D.4 Chemical Vapour Deposition Phase Diagrams for Oxides... 

Roels N, Platon F, Aubreton J, Desmaison J (1990) Chemical vapour deposition of silicon nitride study of the interrelationships of experimental parameters, carbon content, oxidation and wear properties. In Spear KE, Cullen GW (eds) Proceedings of the 11th international conference on chemical vapor deposition. Electrochemical Society, Pennington, NJ, pp717-723... 

Binary and Ternary Compounds with Elements of Groups II, III, and V. 2f-ray electron spectroscopy has been used to probe the electronic structures of tungsten borides, nitrides and also some carbides and oxides. Enthalpies of formation AH°298.i5 the tungsten borides WB and W2B have been determined by fluorine calorimetry and are — 66.5 and — 68.2 kJ mol respectively. The theoretical possibilities of preparing M02B, a-MoB, MO2B5, WjB, a-WB, and W2B5 by chemical vapour deposition is discussed and MoXj (X = B or Be) have been prepared and examined by X-ray methods. ... 

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