Chemical vapour deposition addition

Ce(R CO.CH.CO.R )3 are readily oxidized (O2) to Ce(R CO.CH.CO.R )4, such as Ce(acac)4(R = R = Me), Ce(dbm)4(R = R = Ph), and Ce(tmhd)4 (R = R = Mc3C), generally found to have square antiprismatic structures, though Ce(tmhd)4 is closer to dodecahedral. These are volatile dark red solids that are soluble in solvents such as benzene and chloroform they are volatile, with vapour pressures high enough for Metal Organic Chemical Vapour Deposition (MOCVD) use, whilst they have also been studied as possible alternatives to lead compounds for petrol additives. 

Chemical vapour deposition (CVD), or more specifically, organo-metallic CVD can also be used to prepare ferrite thin films (Itoh, Takeda Naka, 1986). A mixture of acetylacetonate complexes of the desired metal is evaporated in a quartz boat (number 1 in Fig. 3.27) and is reacted with O2, which is introduced directly in the deposition zone. By adding a second furnace (B), an additional component evaporating at a different temperature can be transported to the substrate. Glass or MgO single crystals can be used as the substrates an annealing up to 1(X)0°C is performed on the film to improve its crystallisation. Spinel thin films (Ni, Ni-Zn) have been prepared by this method. 

Similar to perfluoroaUtylsilver compounds perfluorinated alkenylsilver complexes possess a remarkably high thermal stability. The compounds can be obtained by addition of silver fluoride to perfluoroalkynes (equation 15) or perfluoroallene (equation 16) . Compound 15 has been used as precursor for the deposition of silver films by plasma-enhanced chemical vapour deposition or thermal MOCVD. ... 

Another intrinsic approach has been proposed by Li et al. (2010). This time, the polymer network itself was used to heal the hydrophobicity by molecule displacement. The coating employed was made using layer-by-layer deposition of poly(allylamine hydrochloride) (PAH) with sulfonated polyether-ether-ketone (SPEEK) and polyacrylic acid (PAA) with final addition of lH,lH,2H,2H-perfluorooctyltriethoxysilane (POTS) by chemical vapour deposition (CVD) on the PAH-SPEEK/PAA coating. After removal of surface layers by O2 plasma, hydrophobicity was restored as a function of time and relative ambient humidity. 

Qiao [6] has evidenced an intramolecular reaction between boron and nitrogen forming boron nitride. However, in this study, only the chemical bond between boron and nitrogen has been shown and not the lamellar structure of h-BN. Friction-induced bidimensional films would be generalized if lamellar boron nitride is formed in presence of borated and nitrogenous additives. The synthesis of boron nitride by conventional method, for example by chemical vapour deposition (CVD) is very difficult and requires drastic conditions of temperature and pressure. These conditions could be obtained in the contact area during sliding for the tribochemical reaction. 

See, for example, Carlsson, Jan-Otto and HSrsta, Anders, Thermodynamic investigation of selective tungsten chemical vapour deposition Influence of growth conditions and gas additives on the selectivity in the fluoride process. Thin Solid Films, 1988 158 107-122. 

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