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Charge neutrality level

Charge injection, 19-2, 19-10, 19-24, 19-40 Charge injection barriers, 21-19-21-20 Charge neutrality levels, 19-7-19-8 Charge transport, 8-3, 8-25-8-34, 19-3 Charge vibrational coupling, 21-2 Charge-density wave (CDW), 16-10, 16-12,... [Pg.1017]

The central quantity in the IDIS model is the charge neutrality level (CNL), the position of which is such that the integrated induced DOS up to the CNL equals the number of electrons of the isolated molecule ... [Pg.142]

Let us consider a solid that contains only one type of electron trap of volume density N at the discrete level ( and a set of occupied deeper electron traps of density M. The experiment is performed in a temperature range in which traps N empty but traps M remain thermally disconnected and act only as an untapped reservoir of trapped electrons. The density of recombination centers is unspecified, but a density/of them is empty. AtT = Tq, a concentration of /o empty recombination centers exists due to excitation. At these conditions, charge neutrality of the sample is of the form... [Pg.12]

Fig. 7.13 Schematic representation of the ionic rigid-band and metallic common-band models of bonding in binary AB systems. The quantities and give the free-atom energy levels, whereas the positions of fA and B in the metallic bond reflect the small shift which takes place on alloy formation in order to maintain local charge neutrality. Fig. 7.13 Schematic representation of the ionic rigid-band and metallic common-band models of bonding in binary AB systems. The quantities and give the free-atom energy levels, whereas the positions of fA and B in the metallic bond reflect the small shift which takes place on alloy formation in order to maintain local charge neutrality.
For the vacancy mechanism, the single vacancy in silicon is believed to exist in four charge states V+, Vs, V , and V=, where + refers to a donor level, x is a neutral level, and - is an acceptor level (5, 6). The creation of a vacancy introduces a new lattice site and, thus, four new valence band states in the crystal. These states are available as acceptors but are not shallow. The lattice distortion associated with the vacancy splits states from the valence and conduction bands of the surrounding atoms by a few tenths of an electronvolt into the forbidden cap. States split from the valence band become donors, and those split from the conduction band become acceptors. [Pg.283]

Dunlap et al., 1997 Godbey et al., 1999), dendrimers (Chen et al., 2000) and cationic polysaccharide, chitosan (Erbacher et al., 1998). It was suggested that DNA condensation is induced by multivalent cations where approximately 90% of its charge is neutralized, and that divalent cations have insufficient potency to attain the charge neutralization on such a level (Wilson and Bloomfield, 1979 Bloomfield, 1991, 1996 He etal., 2000 Stevens, 2001). [Pg.127]

The third problem is process stability at high power levels during longterm operation In DC operation, the oxidized area of the target is subject to continuous ion bombardment. The oxidized surface exhibits some conductivity, which allows for charge neutralization to a certain extent. When the power is increased further, the dielectrics charge up until the electrical field... [Pg.200]


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See also in sourсe #XX -- [ Pg.185 , Pg.188 , Pg.189 ]




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