Characterization techniques spatial resolution

The primary drawback to the application of XPS in adhesion science is associated with the limited spatial resolution of the technique. This can make it difficult to study processes that are highly localized, such as corrosion, or to accurately characterize certain types of failure surfaces where, for example, the locus of failure may pass back and forth between two phases. 

Molecular Orientation Characterization of molecular orientation is important as many physical and mechanical properties of polymers depend on the extent and uniformity of the orientation [2,4,25]. Orientation can be measured by using a variety of techniques [2,4,25,33,34]. IR spectroscopy not only allows the characterization of amorphous and crystalline phases separately, it also provides morphological data and can be used to map orientation with high spatial resolution [35]. 

Raman microspectroscopy results from coupling of an optical microscope to a Raman spectrometer. The high spatial resolution of the confocal Raman microspectrometry allows the characterization of the structure of food sample at a micrometer scale. The principle of this imaging technique is based on specific vibration bands as markers of Raman technique, which permit the reconstruction of spectral images by surface scanning on an area. 

It is expected that the geometrical dimensions of IC devices will continue to decrease through the use of electron beam and x-ray lithography. Analysis of these small geometries presents additional challenges since a tradeoff exists between analysis area, and detection limits for the microbeam analysis techniques, AES and SIMS. The other surface analysis techniques of XPS and RBS already have very limited spatial resolution with respect to the current geometrical dimensions of IC s. The fabrication of denser and more complicated IC s also increases the value of each wafer which increases the need for additional process characterization and control. The increased application of surface analysis to semiconductor problems will provide a better understanding of these processes and will stimulate the further development of instrumental surface analysis techniques. 

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