Calculated images 100 incidence

Figure 4. Calculated images for the Cmcm topology of zeolite ZSM-48 for [001] incidence (Af =-29 to -1029 A thickness 20,40,60,80 and 100 A resolution 3.1 A).

Fig. 9.6. (a) Calculated image with only the incident beam and the four superstructure spots of type 011 inside the objective aperture (b) a similar experimental image where disorder of the image features caused by charge modulation is present, both incommensurability and out of phase boundaries. 

Figure 2. Nanodiffraction patterns from small gold particles for an incident beam diameter of 1-2 nm (a) Observed for a particle of 2-3 nm diameter showing twinning on two planes (b) Observed for a multiply twinned particle of 1.5 nm diameter. (c) Calculated for a model multiply twinned particle. The black spots in (a) and (b) are the small mirrors in the optical analyser system used as detectors for imaging.

Figure 3. Dependence of Ni ion yield on azimuthal angle at various pol r angle for clean Ni(001) bombarded by 1500 eV Ar ions at normal incidence. The solid curves represent experimental data while the dashed curves are predicted values obtained by correcting the calculated yields for 1000 eV Ar ion bombardment for the presence of the image force.

With the appropriate incident flux, we can process our recorded data to form a matrix of optical densities OD,V/p. In this matrix, the individual images of our data set are reformed in single lines P (while preserving the overall order of pixels in the images). The spectra at each of the pixels form rows N in the same matrix. If all spectra in the matrix are known, the thickness maps tSxP can be calculated via... 

Fig. 21. The output current ID from an elemental integrated-image sensor as a function of the incident photon flux N. The experimental points were obtained when the sensor was addressed individually ( ) and as part of an array (O). It is found that / N% . The photosensor area was 1.4 X 10 3 cm2. The full line was calculated from the individual characteristics of the FET and the a-Si H photoconductor. (From Snell et al. (1984).]...

In parallel with these preliminary experimental imaging studies we have also calculated additional simulated images for [001], [100] and [010] incidence for both structural models at two different aperture limited resolutions in order to establish the optimal conditions for high resolution imaging. Figures 4-9 show the results of these calculations for [001], [100] and [010] incidence, respectively, for both Cmcm and Imma topologies, calculated in each instance for a resolution of 3.1 A and objective lens defoci of between -29 and -1029 A and crystal thicknesses of 20-100 A. 

Figure 7.1 (A) Schematic representation of the Metal-Enhanced Fluorescence phenomena (B) FDTD calculations for two silver nanoparticle arrays (d = 100 nm). (C) Wavelength-dependent calculated Ej maximum intensity for silver nanoparticle arrays (d = 100 nm). Geometries and incident field polarization [p-polarized) and propagation direction are shown in the insets. The gap between the nanopaiticles was assumed to be 2 nm in the calculations. (D) Calculated field enhancement as a function of distance for a single silver nanoparticle (d = 100 nm).The inset shows these results as an FDTD E image above the nanoparticle.

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