Butler-Volmer type behavior

Hence, it appears that metal electrodes in solutions (which are covered by surface films) may behave electrochemicaUy, similar to the usual classical electrochemical systems (Butler-Volmer type behavior. [12]). 

The non-steady-state optical analysis introduced by Ding et al. also featured deviations from the Butler-Volmer behavior under identical conditions [43]. In this case, the large potential range accessible with these techniques allows measurements of the rate constant in the vicinity of the potential of zero charge (k j). The potential dependence of the ET rate constant normalized by as obtained from the optical analysis of the TCNQ reduction by ferrocyanide is displayed in Fig. 10(a) [43]. This dependence was analyzed in terms of the preencounter equilibrium model associated with a mixed-solvent layer type of interfacial structure [see Eqs. (14) and (16)]. The experimental results were compared to the theoretical curve obtained from Eq. (14) assuming that the potential drop between the reaction planes (A 0) is zero. The potential drop in the aqueous side was estimated by the Gouy-Chapman model. The theoretical curve underestimates the experimental trend, and the difference can be associated with the third term in Eq. (14). 

As shown in Table 9.1, the typical timescale for the electrochemistry ( Cell Charging Time ) is on the order of 10-5 s. As a result, it is often that this transient is ignored in cell performance calculations, and the quasi-steady Butler-Volmer relationship is used alone (Qi et al., 2005). An example model for this particular type of dynamic cell behavior is given in Section 9.5. 

Often, the exponential dependence of the dark current at semiconductor-electrolyte contacts is interpreted as Tafel behavior [49], since the Tafel approximation of the Butler-Volmer equation [50] also shows an exponential increase of the current with applied potential. One should, however, be aware of the fundamental differences of the situation at the metal-electrolyte versus the semiconductor-electrolyte contact. In the former, applied potentials result in an energetic change of the activated complex [51] that resides between the metal surface and the outer Helmholtz plane. The supply of electrons from the Fermi level of the metal is not the limiting factor rather, the exponential behavior results from the Arrhenius-type voltage dependence of the reaction rate that contains the Gibbs free energy in the expraient It is therefore somewhat misleading to refer to Tafel behavior at semiconductor-electrolyte contacts. 

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