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Buffer-layer-assisted growth

II- VI semiconductor nanostructures produced by buffer-layer-assisted growth structural evolution and photoluminescence. Physical Review B - Condensed Matter and Materials Physics, 73(12), 1-8. [Pg.757]

Kato et al. [163] and Iwata et al. [164] have performed similar studies on ZnO heteroepitaxial layers grown using plasma-assisted MBE and radical-source MBE techniques. Kato et al. [163] used (112 0)a-plane sapphire substrates and high-temperature growth with low-temperature buffer layers for high-quality undoped ZnO epitaxial films. They obtained electron mobilities as high as 120 cm s and... [Pg.68]


See other pages where Buffer-layer-assisted growth is mentioned: [Pg.263]    [Pg.131]    [Pg.455]    [Pg.263]    [Pg.131]    [Pg.455]    [Pg.234]    [Pg.60]    [Pg.248]    [Pg.479]    [Pg.263]    [Pg.57]    [Pg.159]    [Pg.206]    [Pg.110]    [Pg.323]   


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