Bridgman horizontal

Group II-VI materials (e.g., CdTe, HgCdTe) Detectors Vertical Bridgman, horizontal Bridgman... 

P. Lehmann, R. Moreau, D. Camel, R. Bolcato. A simple analysis of the effect of convection on the structure of the mushy zone in the case of horizontal Bridgman solidification. Comparison with experimental results. J Cryst Growth 183 690, 1998. 

M. C. Liang, C. W. Fan. Three-dimensional thermocapillary and buoyancy convections and interface shape in horizontal Bridgman crystal growth. J Cryst Growth 180 5% , 1997. 

H. B. Hadid, D. Henry. Numerical study of convection in the horizontal Bridgman configuration under the action of a constant magnetic field. 2. Three-dimensional flow. J Fluid Mech 333 57, 1997. 

Fig. 8. Energy below the conduction band of levels reported in the literature for GaAs. Arrangement and notations are the same as for Figs. 4 and 5. Notations not defined there are epitaxial layer on semi-insulating substrate (EPI/SI), boat-grown (BG), vapor phase epitaxial layer on semi-insulating substrate (VPE/SI), melt-grown (M), molecular beam epitaxy (MBE), horizontal Bridgman (HB), irradiated with 1-MeV electrons or rays (1-MeV e, y), thermally stimulated capacitance (TSCAP), photoluminescence excitation (PLE), and deep level optical spectroscopy (DLOS).

The variation with temperature of n and for an undoped GaAs crystal grown by the horizontal Bridgman method is shown in Fig. 3. The parameters that give the best fit to Eq. (12) are also shown. The power of this method is illustrated by the small probable errors in the fitted parameters, i.e., less than 15% for Nd and less than 1% for ED0. Very few techniques can lay claim to such accuracy. Note that for maximum reliability it is necessary to know the Hall r factor [Eq. (A 17)], since n = r/eR. A variational calculation, with NAS as the only undetermined parameter, was used to fit the fi versus T data, and also obtain r versus T (Meyer and Bartoli, 1981 Look et al., 1982a). 

Fig. 3. The temperature dependence of the electron concentration and electron mobility for a GaAs crystal grown by the horizontal Bridgman method. The solid curves are theoretical fits, as described in the text. [From Look et al. (1982a).]...

Fig. 3.45 Horizontal Bridgman apparatus for growing GaAs single crystals. ...

There are several different geometries for the Bridgman-Stockbarger method. Comparing the vertical and horizontal geometries, what are the advantages and disadvantages of each ... 

We studied some of the properties of glassy and single-crystal CdGeP2. The singlecrystal specimens were prepared by the horizontal Bridgman method. 

An alternative approach with a horizontal cold boat system with RF induction heating is to traverse the melt out of the work coil, thus driving a solid-liquid interface through the material. This method is sometimes referred to as the Chalmer s method or horizontal Bridgman technique. A cold finger can be introduced at one end to provide a specific nucleation site. This method has not found wide application for rare earth compounds. 

Single crystals were grown from the melt by the horizontal Bridgman method In sealed cylindrical Ta crucibles [3]. The method of directional crystallization from the melt in a sealed Ta crucible was used by Adamyan et al. [6], the crucible was lowered through a high-frequency inductance furnace. 

Fig. 11.4 Radial variations in waveiength (in run at room temperature) in 13-mm diameter Bridgman (a) and 20-mm diameter ACRT (b) materiai. Upper - full area coverage, lower - vertical and horizontal line scans. (Reprinted from Capper et al.J. Cryst. Growth 275 (2005) 259, copyright (2005) reproduced with permission from Elsevier Science.)...

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