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Bridgman growth technique

The most frequently used techniques for the commercial manufacture of synthetic gemstone materials are summarized in Table 4. More details on these can be found in various texts (2,5—7). An overview including the various manufacturers is also available (3). Only rardy used for synthetics are such alternative growth techniques as the Bridgman technique of solidification in a cmcible and the float zone technique, both involving growth from the melt... [Pg.214]

The Bridgman-Stockbarge melt growth technique. This method is named after P.W. Bridgman (United States) and D.C. Stockbarge (Germany) with the collaboration of three... [Pg.795]

J. Shen, D.K. Aidun, L. Regel, W.R. Wilcox, 1993, Characterization of precipitates in CdTe and CdmxZnxTe grown by vertical Bridgman-Stockbarger technique , J. Cryst. Growth 132, 250-260. [Pg.101]

Application of the accelerated crucible rotation technique to the Bridgman growth of CdxHgi xTe simulations and crystal growth ,... [Pg.101]

Table 5.2 Comparison of the Different Time Scales for Different Materials and Growth Techniques for Typical Crystal Dimensions L (Radius), Growth Rates R, and Axial Temperature Gradients in the Crystal G Cz = Czochralski-Type, B = Bridgman-Type,... Table 5.2 Comparison of the Different Time Scales for Different Materials and Growth Techniques for Typical Crystal Dimensions L (Radius), Growth Rates R, and Axial Temperature Gradients in the Crystal G Cz = Czochralski-Type, B = Bridgman-Type,...
The optimization of the thermal conditions in Bridgman-type crystal growth of GaAs and InP with respect to low thermal stress conditions by using numerical simulation results mainly in a reduction of the dominant type of dislocations, the so-called 60°-dislocations with curved line vectors [49]. In Table 5.4 typical dislocation densities reported for different crystals grown by Bridgman-type growth techniques are summarized. [Pg.159]

In Bridgman-type crystal-growth configurations one possibility to control convection and therefore the shape of the solid/liquid interface, as well as the dopant distribution, is the so-called accelerated cmcible rotation technique (ACRT). This technique was developed by Scheel [56] and has been applied especially to the Bridgman growth of CdHgTe and CdZnTe crystals, e.g. [57, 58). [Pg.167]

Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT)... [Pg.283]


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See also in sourсe #XX -- [ Pg.58 ]




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