Brewster angle infrared measurement

In this study, the layered structure of the organotiichlorosilane monolayer with a vinyl end group was constructed by the Langmuir method and its structure was analyzed by X-ray reflectivity (XR), Brewster angle Fourier transform infrared (B-FT-IR) spectroscopic measurements (14), electron diffraction (ED) and scanning force microscopic (SFM) observations. Furthermore, the domain height of the (NTS/FOETS) mixed monolayer surface with phase-separated structure was controlled by the combined method of Langmuir and chemisorption methods. 

Brewster angle IR spectroscopic measurement (14) was performed to evaluate the formation of layered structure in the NTS multilayer films. The NTS monolayer was transferred onto double mirror polished silicon wafer substrate. The incident angle of p-polarized infrared beam was 73.7" (the Brewster angle of interface between silicon wafer and air) in order to eliminate the multiple reflection of the infrared beam within the silicon wafer substrate. The spectra were recorded at a resolution of 4 cm" ... 

Dielectrics are commonly classified as a subgroup of nonmetallic materials with a vanishingly small absorption index and a refractive index between 1.3 and 4.0. Measurement of the infrared spectra of thin films on dielectric surfaces is more difficult than the corresponding measurement on a metal surface, for several reasons. First, the reflectance from dielectric surfaces is often very low (see Figure 13.1). Indeed, when the angle of incidence is close to Brewster s angle, the reflectance of p-polarized radiation is zero. Nonetheless, useful spectra of thin films on the surface of dielectrics can still be measured. 

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