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Brewster angle analysis

Figure 2.20 Brewster angle analysis of a multiple-layer structure, shown here for a three-phase system the plane of incidence, defined by the surface normal n and the photon wave vector k, is the x-y plane E x,y)... Figure 2.20 Brewster angle analysis of a multiple-layer structure, shown here for a three-phase system the plane of incidence, defined by the surface normal n and the photon wave vector k, is the x-y plane E x,y)...
The use of surface-sensitive techniques for the development of photoelectrochemical devices that convert solar energy has been described. The essence of this approach is the control of interfacial properties. This is achieved by a combination of empirical procedures that are developed into directed approaches of interface modification for desired electronic, chemical, and structural properties by a feedback between preparation and analysis. Besides the multitude of commercially available surface analytical techniques employed (AFM, STM, TEM, HRSEM, HREELS, SRPES, FTIR), novel methods have been developed such as Brewster angle refiectometry and stationary microwave reflectivity. The detailed highly surface-sensitive analysis of the surface chemistry of samples where electrochemical currents have passed has become possible by the development of in-system photoelectron spectroscopy and HREELS. [Pg.170]

Figure 2.12 refers to a substrate with the optical constants = 3.4 and 3 = 1, which was chosen as a model substrate because its characteristics are close to those of doped silicon and one form of carbon [75]. Analysis of the cnrves in Fig. 2.12a (see also 1.4.15°) shows that the reflectance of p-polarized radiation from the clean substrate Ro,p ((pi) is close but not eqnal to 0 at angles of incidence (pi close to the pseudo-Brewster angle of the substrate, The value Ro,p cps it changes sign, while its maximum is observed, as for transparent Si, in the spectra measured at angles of incidence larger than (ps. Figure 2.12 refers to a substrate with the optical constants = 3.4 and 3 = 1, which was chosen as a model substrate because its characteristics are close to those of doped silicon and one form of carbon [75]. Analysis of the cnrves in Fig. 2.12a (see also 1.4.15°) shows that the reflectance of p-polarized radiation from the clean substrate Ro,p ((pi) is close but not eqnal to 0 at angles of incidence (pi close to the pseudo-Brewster angle of the substrate, The value Ro,p <Pb) increases with increasing k. Sign of the absorption depth of the layer on doped Si measured with -polarization (Fig. 2.12b) is always positive, as opposed to transparent Si (Fig. 2.9). The form of the angle-of-incidence dependence for p-polarization differs greatly at (pi < (ps, where ARp is positive, but at <pi > cps it changes sign, while its maximum is observed, as for transparent Si, in the spectra measured at angles of incidence larger than (ps.
Quantitative analysis of Brewster angle microscopy images... [Pg.608]

The addition of a thin film to the interface creates multiple reflections at the air-film and film-water interfaces (8), which change the properties of the Brewster angle and provide information about its thickness. Frequently the assumption of a constant layer density is made for data analysis, although density variations clearly occur physically. [Pg.656]


See other pages where Brewster angle analysis is mentioned: [Pg.84]    [Pg.126]    [Pg.84]    [Pg.126]    [Pg.130]    [Pg.16]    [Pg.248]    [Pg.195]    [Pg.129]    [Pg.361]    [Pg.87]    [Pg.169]    [Pg.314]    [Pg.382]    [Pg.28]    [Pg.105]    [Pg.603]    [Pg.2082]    [Pg.17]    [Pg.255]    [Pg.73]    [Pg.276]    [Pg.5]    [Pg.5]    [Pg.196]    [Pg.197]    [Pg.199]    [Pg.39]   
See also in sourсe #XX -- [ Pg.84 , Pg.126 , Pg.129 ]




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