Boron-silicon system

Compound 27, a mixed boron-silicon system, was synthesized to investigate the influence of organosilicon on the anion-binding process (86). A fluoride complex was isolated and NMR and crystallographic studies showed that the silicon was involved in binding the anion, but only weakly. 

But carbon is not unique in forming bonds to itself because other elements such as boron, silicon, and phosphorus form strong bonds in the elementary state. The uniqueness of carbon stems more from the fact that it forms strong carbon-carbon bonds that also are strong when in combination with other elements. For example, the combination of hydrogen with carbon affords a remarkable variety of carbon hydrides, or hydrocarbons as they usually are called. In contrast, none of the other second-row elements except boron gives a very extensive system of stable hydrides, and most of the boron hydrides are much more reactive than hydrocarbons, especially to water and air. 

Ignition and Reaction of... Boron-Silicon-Potassium Dichromate Systems , Thermochimica-Acta 9 (2), 213-16 (1974) CA 82, 75111... 

Baskaran, S., and Halloran, J.W. (1994), Fibrous monolithic ceramics III, Mechanical properties and oxidation behavior of the silicon carbide/boron nitride system , J. Am. Ceram. Soc., 77(5) 1249-1255. 

The reactions of palladium with nonmetals such as boron, silicon, phosphorus, arsenic, and antimony have been investigated. The systems are complex and nonstoichiometry is frequent although some complexes of definite, stoichiometric composition have been reported. 

Drowart and co-workers have used the Knudsen effusion-mass spectroraetric technique to determine the vapor equilibrium over the systems SiC-graphite (1 ) and boron-silicon-graphite (2 ). 3rd law analysis of the partial pressures of Si and SiC yields the results summarized below. The adopted value, A.H (298.15 K) 172 8 is the mean of the two results and the uncertainty... 

E. Rudy, Ternary phase equilibria in transition metal-boron-carbon-silicon systems. Part V. Compendium of phase diagram data. Tech. Rep. AFML-TR—Air Force Mater. Lab. (US.) AFML-TR-65-2 (1969). 

Meerson GA (1966) Investigations of some hard alloys in the boron-silicon-carbon system. Mod Develop Powder Met, Proc Int Powder Met Conf 3 95 Dokukina IV, Kalinina AA, Sokhor MI, Shanurai FI (1967) Izv Akad Nauk SSSR, Neorg Mater 3 630... 

Rudy, E. and Windisch, S. in Ternary Phase Equilibria in Transition Metal-Boron-Carbon Silicon Systems, Part I, Vol. Vll, Technical Report No. AFML-TR-65-2, Wright Patterson Air Force Base, OH, 1966. 

Bor] Borisov, E.V., Gruzin, P.L., Zemskii, S.V., CandMoinCr, Cr-Fe, and Cr-Ta Alloys, Impurity Tracer Diffusion , Diff. Data, 3,266 (1969) (Kinetics, Transport Phenomena, Abstract, 0) [1969Rud] Rudy, E., Ternary Phase EquiUbria in Transition Metal-Boron-Carbon-Silicon Systems. 

There are several excellent methodologies reported in the literature that make use of a variety of aUylating reagents based on boron, silicon, tin, and titanium metals for carbonyl allylation reactions. In the early 1980s, Denmark and Weber developed a classification system for allylation reagents that takes into account their proposed mechanism of addition to the carbonyl moiety (Figure 4). ... 

Teng Feng-Hsiang. Investigation of Some Hard Alloys of the System Boron-Silicon—Carbon, author s abstract of dissertation, Moscow Institute of Steels and Alloys, Moscow, 1963. 

The chemistry and stereochemistry of aminoboranes containing the siLicon—nitrogen—boron linkage have been the subject of numerous studies. Many of these compounds are useful precursors to other B—N systems including diboryl-amines (45) and B—H substituted aminoboranes (46). A series of... 

Present oxidation-protection systems are based on silicon carbide (SiC), which is applied by pack cementation or by chemical-vapor infiltration (CVI) (see Ch. 4).d ] Boron, zirconium, and other... 

Refractories such as boron nitride, silicon nitride, silicon carbide, and boron carbide are of great importance for the production or protection of systems which can be operated in very high... 

In the molecule of 4-methylene-3-borahomoadamantane derivative 79, the structure of which was determined by X-ray analysis, the six carbon atoms of the triene system, the two boron and two silicon atoms all lie in one plane within experimental error (mean deviation 1.4 pm). The boron atoms deviate from the trigonal-planar geometry, since the sum of bond angles around the atoms is only 355.8° instead of 360°, as usually encountered in triorganoboranes. Considerable distortions of the bond angles at the terminal C-C double bond occurs in the vicinity of the boron atoms B-C(4)-C(ll) 130.60(19)° and B-C(4)-C(5) 107.38(17)° <2002CEJ1537>. 

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