Bismuth temperature dependence

Blais S, Jerkiewicz G, Herrero E, Feliu JM. 2002. New insight into the electro-oxidation of the irreversibly chemisorbed bismuth on Pt(lll) through temperature-dependent research. J Electroanal Chem 519 111-122. 

The change of morphology related to the spreading of the bismuth molybdate on the solid solution could be temperature dependent. As a matter of fact the activation of the... 

Figure 11 The inverse susceptibility temperature dependence is shown for several members of the Bi4Sr4RE2Cu4016+y series. Data were collected in a field of lOkG. The inset shows a comparison of the 0p values for the RE-doped 90K and RE-doped Bismuth n=2 phases. Note the excellent agreement.

The temperature dependence of the reaction-diffusion coefficient (diffusional constant) of bismuth atoms in (or, rather, across) the growing NiBi3 layer is described by the Arrhenius relation (see equation (1.34)). As... 

Fig. 1.21. Temperature dependence of the reaction-diffusion coefficient of the bismuth atoms in the growing NiBi3 layer.150...

The lower carrier density of the 80-nm nanowires compared to bulk bismuth is due to the smaller band overlap in the former. For the 40-nm bismuth nanowires, the carrier density has a temperature dependence similar to bulk bismuth at high temperatures, but it drops rapidly with decreasing temperature at low temperatures. Because the carrier density is highly dependent on wire diameter, the transport properties of bismuth nanowires are expected to be highly sensitive to wire diameter, as will be shown experimentally in the section temperature-dependent resistivity of nanowires. ... 

Figure 19(a) shows the temperature dependence of resistance R(T) for bismuth nanowire arrays (dw = 7 - 200 nm) synthesized by vapor deposition and measured by Heremans et al. (2000). Hong et al. (1999) reported similar resistance measurements on bismuth wires of larger diameters (200 nm to 2, uni) prepared by electrochemical deposition (Fig. 19(b)). These two studies... 

Fig. 19. (a) Measured temperature dependence of resistance for bismuth nanowire arrays of various wire diameters dw (Heremans et al, 2000). (b) R(T)/R(290 K) for bismuth wires of larger dw measured by Hong et al. (1999). (c) Calculated R(T)/R(300 K) of 36-nm and 70-nm bismuth nanowires (Lin et al, 2000b). The dashed curve refers to a 70-nm poly crystalline wire with increased boundary scattering. 

Fig. 20. (a) Measured R(T)/R(270 K) for 40-nm bismuth nanowires prepared with alloys of different Te doping levels, (b) The calculated temperature dependence of for 40-nm undoped and Te-doped bismuth nanowires of different Nd. The dashed and solid lines are fitting curves corresponding to undoped and Te-doped Bi nanowires, respectively. 

R(T) is predicted to display a monotonic temperature dependence at a high defect level. This is illustrated by the dashed curve in Fig. 19(c) for polycrystalline 70-nm bismuth wires. Because the nanowires prepared by electrochemical deposition were found to be polycrystalline, their carriers would experience more boundary scattering, resulting in the monotonic R(T) behavior noted experimentally in Fig. 19(b). 

TABLE 2. Temperature Dependences of Total Vapor Pressures in Dissociative Evaporation of Antimony and Bismuth Chalcogenides... 

The temperature dependence of the emf enabled us to estimate entropy and the heat of formation of the higher bismuth and antimony tellurides and selenides. These two quantities were deduced from... 

The high-temperature thermodynamic data obtained in the present study and in [5] were reduced to T — 298 K using the temperature dependence of the specific heat of bismuth telluride in the 550-28 C range [12], the thermodynamic properties of the elements [il], and the temperature dependences of the specific heat of Bi2Se3, Sb2Se3, and Sb2Te3 deduced in the —25°C... 

Whichever method is used for preparation, a hot aqueous leach solution is the end point, from which a pure lead chloride must be produced. Cementation with lead powder can be used to separate and recover copper, silver, gold and bismuth as well as removing arsenic and antimony. Separation of lead chloride by crystallisation can then be used, relying on the high temperature dependence of lead... 

A. Ghosh, Temperature-dependent thermoelectric power of semiconducting bismuth-vanadate glass. J. Appl. Phys. 65(1), 227 (1989)... 

The low-temperature dependence of-the above-mentioned bismuth-europium germanate glass and the time-resolved spectroscopy of these glasses has been studied by the Lyon group (Bourcet et al., 1979 Moine et al., 1981). 

The conductivity of tysonites, as well as that of fluorites, is affected by the presence of polarizable cations with a lone electron pair. The temperature dependences of conductivity of modifications 1 and 11, for Bii xNdx(0,F)3 g solid solutions (Figure 14.28) are presented in Figure 14.37 [22]. The conductivity of solid solutions under investigation increases, in both phases, when the bismuth ions content (and correspondingly, deficit of anions) increases. But the conductivity is higher by one or two orders of magnitude in modification 1 which contains more anion vacancies. 

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