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Bipolar transistors CMOS technology

We have compared radiation hard CMOS (1.2 fim feature size fabricated by UTMC) and bipolar integrated circuitr " (Tektronix, but AT T or Westinghouse yield similar results) to determine the best technology for this application. Fig. 2.14 shows the calculated noise performance vs. shaping time for a detector capacitance of 22 pF. At short shaping times the shot noise contribution of the bipolar transistor s base current becomes small... [Pg.47]

See other pages where Bipolar transistors CMOS technology is mentioned: [Pg.323]    [Pg.3]    [Pg.464]    [Pg.744]    [Pg.748]    [Pg.243]    [Pg.353]    [Pg.354]    [Pg.353]    [Pg.354]    [Pg.322]   
See also in sourсe #XX -- [ Pg.457 ]



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