Behavior of Minor Carrier

Since the concentration of the minor carriers (electrons and/or holes) determines the chemical leakage of oxygen when oxide ion conductor is used as the electrolyte in SOFCs [33], analysis of the performance of electron and hole conduction is an important subject for the electrolyte materials. Partial electronic conduction is commonly analyzed by the ion blocking method, the so-called Wagner polarization method. Partial electronic conductivity is the sum of electronic and hole contribution to the total conductivity, and each conductivity is proportional to a carrier density. Therefore, the total electronic conductivity can be expressed as follows  

Differential of the observed eurrent with respeet to potential, which corresponds to the Po2 in the sample, gives the dependence of the partial electronic 

Determination of hole and electron conductivities and transport numbers of oxide ion in LaGa03-based oxides were performed by the polarization method by Baker et al. [21], Yamajiet al. [35], and Kimand Yoo [36]. Kim et al. reported that Pq2 dependence of hole and electron conductivity is proportional to Pcn and respectively, and well obeys the Hebb-Wagner theory. The results 

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When electrons are injected as minority carriers into a -type semiconductor they may diffuse, drift, or disappear. That is, their electrical behavior is determined by diffusion in concentration gradients, drift in electric fields (potential gradients), or disappearance through recombination with majority carrier holes. Thus, the transport behavior of minority carriers can be described by a continuity equation. To derive the p—n junction equation, steady-state is assumed, so that = 0, and a neutral region outside the depletion region is assumed, so that the electric field is zero. Under these circumstances,... 

The potential-dependent behavior of minority carriers in the accumulation region has up to now not been accessible to electrochemistry. 

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