Basic OFET structure and operation

OFETs operate through the creation and elimination of a sheet of charge carriers at the gate dielectric/body interface (this is further discussed in chapter 6). The basic operation is summarized in Fig. 4.1. 

In a traditional OFET, the charge carriers travel in the channel parallel to the surface of the gate dielectric. The source and drain electrodes provide access to the channel and are engineered to inject charge well under all bias conditions. It is the gap between the source and drain-the channel-whose conductance is switched, adjusting the conductance of the whole device. The 

Charge can flow under an applied source/drain bias 

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