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Backscattering diagram

Fig. 4.15 The backscattered field plotted in the complex plane as a function of frequency. Angle of incidence is 67.5°. Number of columns is 25. Top Frequency range 2-6 GHz. Bottom Frequency range 6.3-12 GHz, where the surface waves are prevalent from 6.3 to 8.4 GHz. Called a backscattering diagram. Fig. 4.15 The backscattered field plotted in the complex plane as a function of frequency. Angle of incidence is 67.5°. Number of columns is 25. Top Frequency range 2-6 GHz. Bottom Frequency range 6.3-12 GHz, where the surface waves are prevalent from 6.3 to 8.4 GHz. Called a backscattering diagram.
Fig. 4.17 The backscattered field (backscattering diagram) from an array of 25 columns plotted In the complex plane. Frequency range 2-6.2GHz (top) and 6.3-12.0GHZ (bottom). Outer columns (i.e., numbers 1 and 25) are loaded with (left) 50 ohms (middle) 100 ohms and (right) 150 ohms. Fig. 4.17 The backscattered field (backscattering diagram) from an array of 25 columns plotted In the complex plane. Frequency range 2-6.2GHz (top) and 6.3-12.0GHZ (bottom). Outer columns (i.e., numbers 1 and 25) are loaded with (left) 50 ohms (middle) 100 ohms and (right) 150 ohms.
Fig. 4.20 The backscattered field from an array of 25 columns plotted in the complex plane (backscattering diagram). Frequency range (a) 2-6.2 GHz and (b) 6.3-12 GHz. Load conditions like Fig. 4.19d columns 1 and 25, 125 ohms columns 2 and 24, 100 ohms columns 3 and 23, 50 ohms columns 4 and 22, 25 ohms. Fig. 4.20 The backscattered field from an array of 25 columns plotted in the complex plane (backscattering diagram). Frequency range (a) 2-6.2 GHz and (b) 6.3-12 GHz. Load conditions like Fig. 4.19d columns 1 and 25, 125 ohms columns 2 and 24, 100 ohms columns 3 and 23, 50 ohms columns 4 and 22, 25 ohms.
Figure Bl.24.1. Schematic diagram of the target chamber and detectors used in ion beam analysis. The backscattering detector is mounted close to the incident beam and the forward scattering detector is mounted so that, when the target is tilted, hydrogen recoils can be detected at angles of about 30° from the beam direction. The x-ray detector faces the sample and receives x-rays emitted from the sample. Figure Bl.24.1. Schematic diagram of the target chamber and detectors used in ion beam analysis. The backscattering detector is mounted close to the incident beam and the forward scattering detector is mounted so that, when the target is tilted, hydrogen recoils can be detected at angles of about 30° from the beam direction. The x-ray detector faces the sample and receives x-rays emitted from the sample.
Fig. 4. Backscattered Raman and ROA spectra of the n-helical protein human serum albumin in H20 (top pair) and the /3-sheet protein jack bean concanavalin A in acetate buffer solution at pH 5.4, together with MOLSCRIPT diagrams (Kraulis, 1991) of their X-ray crystal structures (PDB codes lao6 and 2cna). [Pg.85]

Fig. 5. Backscattered Raman and ROA spectra of native (top pair) and reduced (second pair) hen lysozyme, and of native (third pair) and reduced (bottom pair) bovine ri-bonuclease A, together with MOLSCRIPT diagrams of the crystal structures (PDB codes llse and lrbx) showing the native disulfide links. The native proteins were in acetate buffer at pH 5.4 and the reduced proteins in citrate buffer at pH 2.4. The spectra were recorded at 20°C. [Pg.92]

Fig. 7. Backscattered Raman and ROA spectra of native human lysozyme in acetate buffer at pH 5.4 measured at 20°C (top pair), and of the prehbrillar intermediate in glycine buffer at pH 2.0 measured at 57°C (bottom pair), together with a MOLSCRIPT diagram of the crystal structure (PDB code ljsf) showing the tryptophans. [Pg.97]

Figure 4.15 Schematic representation of RBS. Top the incident ions are directed such that they either scatter back from surface atoms or channel deeply into the crystal. Middle the ions scatter back from target atoms throughout the outer micrometers and suffer inelastic losses, causing the energy of the backscattered ions to tail to zero. Bottom scattering from the heavy outer layer gives a sharp peak separated from the spectrum of the substrate as in the middle diagram. Figure 4.15 Schematic representation of RBS. Top the incident ions are directed such that they either scatter back from surface atoms or channel deeply into the crystal. Middle the ions scatter back from target atoms throughout the outer micrometers and suffer inelastic losses, causing the energy of the backscattered ions to tail to zero. Bottom scattering from the heavy outer layer gives a sharp peak separated from the spectrum of the substrate as in the middle diagram.
Figure 13.3. Schematic diagram of backscatter apparatus. (From Ref. 2, with permission from the Electrochemical Society.)... Figure 13.3. Schematic diagram of backscatter apparatus. (From Ref. 2, with permission from the Electrochemical Society.)...
Figure 1.1. Schematic diagram showing the electron elastic scattering pathways contributing to the techniques of low energy electron diffraction (LEED), backscattering photoelectron diffraction (including the scanned-energy mode - PhD) and surface extended X-ray absorption fine structure (SEXAFS). Black disks represent substrate atoms, grey-shaded disks represent adsorbate atoms. Figure 1.1. Schematic diagram showing the electron elastic scattering pathways contributing to the techniques of low energy electron diffraction (LEED), backscattering photoelectron diffraction (including the scanned-energy mode - PhD) and surface extended X-ray absorption fine structure (SEXAFS). Black disks represent substrate atoms, grey-shaded disks represent adsorbate atoms.
Figure 13.6 Schematic diagram of Rutherford backscattering. [From Rauhala (1994).]... Figure 13.6 Schematic diagram of Rutherford backscattering. [From Rauhala (1994).]...
Fig. 3.8. Backscattered electron image of the transition zone between cobalt and silicon after annealing at 800°C for 230400 s (64 h) in vacuum.264 The microstructure reveals all the phases available on the equilibrium phase diagram of the Co-Si binary system. A continuous crack is seen between Co and C02SL Photograph kindly provided by Dr. A.A. Kodentsov. Reprinted with permission from Elsevier Science. Fig. 3.8. Backscattered electron image of the transition zone between cobalt and silicon after annealing at 800°C for 230400 s (64 h) in vacuum.264 The microstructure reveals all the phases available on the equilibrium phase diagram of the Co-Si binary system. A continuous crack is seen between Co and C02SL Photograph kindly provided by Dr. A.A. Kodentsov. Reprinted with permission from Elsevier Science.
Figure 3.13 displays a backscattered electron image of the Ni-Zn transition zone after a 2 h anneal at 400°C. Upon superficial metallographical examination, four intermetallic layers appear to be distinguishable in the microstructure of the Ni-Zn transition zone, giving an impression of the formation of all the compounds possible according to the equilibrium phase diagram by M. Hansen and K. Anderko.142 The same applies to Co-Zn reaction couples (Fig. 3.14a). However, upon more close examination this first impression tumes out to be quite erroneous, with only two of the four intermetallic compounds actually occurring. Figure 3.13 displays a backscattered electron image of the Ni-Zn transition zone after a 2 h anneal at 400°C. Upon superficial metallographical examination, four intermetallic layers appear to be distinguishable in the microstructure of the Ni-Zn transition zone, giving an impression of the formation of all the compounds possible according to the equilibrium phase diagram by M. Hansen and K. Anderko.142 The same applies to Co-Zn reaction couples (Fig. 3.14a). However, upon more close examination this first impression tumes out to be quite erroneous, with only two of the four intermetallic compounds actually occurring.
Figure 2-23 Schematic diagram of a rotating surface scanning device Li, rotating lens that focuses the laser beam on the surface of the sample and simultaneously collects the backscattered Raman light L2, focusing lens that focuses the Raman light on the spectrometer slit /, focal length of the lens. (Reproduced with permission from Ref. 48.)... Figure 2-23 Schematic diagram of a rotating surface scanning device Li, rotating lens that focuses the laser beam on the surface of the sample and simultaneously collects the backscattered Raman light L2, focusing lens that focuses the Raman light on the spectrometer slit /, focal length of the lens. (Reproduced with permission from Ref. 48.)...
FIG. 21-13 Diagram of Leeds and Northrup Ultrafine Particle Size Analyzer (UPA), using fiber optics in a backscatter setup. [Pg.2256]

Fig. 7. Wind dependence of the relative backscattered radar power, areh measured under different conditions (x slick-free, no rain + slick-covered, no rain slick-free, with rain o slick-covered, with rain). Upper diagram W-polarization, lower diagram HV-polarisation... Fig. 7. Wind dependence of the relative backscattered radar power, areh measured under different conditions (x slick-free, no rain + slick-covered, no rain slick-free, with rain o slick-covered, with rain). Upper diagram W-polarization, lower diagram HV-polarisation...
FIGURE 21>22 Diagram ol Everhart-Thomley secondary electron delector. Paths of secondary electrons (SE) and backscattered electrons (BE are shown. The scintillator is a phosphor that emits light when struck by energetic particles such as electrons, gamma rays, or radioactive particles. [Pg.612]

Also electron diffraction methods like electron backscatter diffraction (EBSD) can deliver phase information (see Fig. 4). EBSD, applied in scanning electron microscopes, assigns to each surface grain its phase affiliation and its orientation as a result of detected Kikuchi diagrams during specimen scanning (Schwartz et al. 2009). Figure 4 shows an EBSD analysis result for a two-phase titanium specimen. [Pg.1192]

Flow Rate Measurements, Methods, Fig. 17 Block diagram of the experimental setup for a backscatter interferometric flowsensing system [3]... [Pg.1171]

Fig. 4 Diagram of backscatter interferometry for fluid flow measurement [11]... Fig. 4 Diagram of backscatter interferometry for fluid flow measurement [11]...

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See also in sourсe #XX -- [ Pg.104 , Pg.105 , Pg.106 , Pg.107 , Pg.108 , Pg.109 , Pg.110 , Pg.111 , Pg.112 , Pg.113 , Pg.145 , Pg.148 , Pg.161 , Pg.162 , Pg.163 , Pg.164 , Pg.176 ]




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