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Arsenic doping methods

First, Newman s method was applied to yttrium phosphate, arsenate, and vanadate doped with Eu3+ (Table 9). The best results were obtained with t4 = t6 = 8. [Pg.190]

Sihcon metal of the highest degree of purity is used in solar cells, a new ecofriendly energy source. Sunlight can be converted to electricity in thin-fihn photovoltaic modules of sihcon deposited on titanium dioxide. Another method is to use a wafer, composed of a layer of silicon doped with arsenic (an n-type semiconductor) combined with a layer doped with boron (a p-type semiconductor). When exposed to sunhght electrons flow between the p- and n-layers and thus an electric current is generated. [Pg.919]


See other pages where Arsenic doping methods is mentioned: [Pg.295]    [Pg.348]    [Pg.195]    [Pg.130]    [Pg.348]    [Pg.350]    [Pg.301]    [Pg.223]    [Pg.536]    [Pg.655]    [Pg.683]    [Pg.647]    [Pg.675]    [Pg.551]    [Pg.539]    [Pg.540]    [Pg.700]    [Pg.724]    [Pg.34]    [Pg.804]    [Pg.369]    [Pg.690]    [Pg.41]    [Pg.634]    [Pg.662]    [Pg.729]    [Pg.757]    [Pg.706]    [Pg.730]    [Pg.693]    [Pg.721]    [Pg.527]    [Pg.727]    [Pg.755]    [Pg.647]    [Pg.675]    [Pg.277]   
See also in sourсe #XX -- [ Pg.2 , Pg.6 , Pg.17 ]

See also in sourсe #XX -- [ Pg.2 , Pg.6 , Pg.17 , Pg.18 ]




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