Annealing heater

Fig. 6 High-throughput CFPCR multireactor platform consisting of three functional units a fluidic controller for distributing reagents and analyte to the reactors, a CFPCR multireactor, and a distributed temperature controller. Ho denotes the denaturation heaters (90-95 °C), annealing heaters (50-70 °C), and He extension heaters (70-77 °C). Reproduced from [92] with permission...

The second study was done in a cold-wall reactor12-13 using the same reactants. The reactor was a single-wafer system, similar to the tube reactor of Figure 18 in Chapter 2, with the wafer heated by an electrical resistance heater in the pedestal. In this case, the sublimator was operated at 88°C with a 10 seem flow of H2. The influence of SiH4 flow rate on the film stoichiometry and resistivity (after anneal) are shown in Figure 11. 

A German company, Kuhne GmbH, has introduced a triple-bubble process, which uses infrared heat, rod heaters, and other annealing techniques in a thermofixa-tion station to impart precise shrink rates to coextruded film. 

An initial resistance-temperature run was made from the ice-point temperature to about 540°K to detect effects of cold-working in the coil-winding process and to provide some annealing. The specimen coil was then inserted into the liquid-helium dewar and left for 2 hr before the resistance value was recorded at 4.2°K. Heat from a 2-w heater vaporized the helium and gradually warmed the dewar to 274°K. The specimen temperature rose from 4.2° to 274°K in about 12 hr. 

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