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Alkoxides thin film processing

Solution Deposition of Thin Films. Chemical methods of preparation may also be used for the fabrication of ceramic thin films (qv). MetaHo-organic precursors, notably metal alkoxides (see Alkoxides, metal) and metal carboxylates, are most frequently used for film preparation by sol-gel or metallo-organic decomposition (MOD) solution deposition processes (see Sol-GEL technology). These methods involve dissolution of the precursors in a mutual solvent control of solution characteristics such as viscosity and concentration, film deposition by spin-casting or dip-coating, and heat treatment to remove volatile organic species and induce crystaHhation of the as-deposited amorphous film into the desired stmcture. [Pg.346]

Either particulate sol or polymeric sol has been used for thin film coatings. The polymeric sol was fabricated by partial hydrolysis of corresponding metal alkoxide. If the rate of hydrolysis or condensation is very fast, then some kinds of organic acids, beta-dicarbonyls, and alkanolamines have been used as chelating agent in sol-gel processes to control the extent and direction of the hydrolysis-condensation reaction by forming a strong complex with alkoxide. [2]. [Pg.78]

Porous ultrafine tin oxide ethanol gas sensors92 in the form of a thin film have been prepared from tin alkoxide by the sol-gel process. The microstructural evolution of the tin oxide films, which affected the ethanol gas-sensing properties of the films, was investigated as a function of firing temperature and solution concentration. Theoretically, it was expected that ethanol gas sensitivity would increase monotonically with decreasing film thickness, but experimental results showed a maximum sensitivity at about 70 nm. The sudden decrease of the sensitivity below the thickness of 70 nm seemed to be due to the sudden decrease of film porosity, i.e., the sudden decrease of the number of the available sites for the oxidation reaction of ethanol molecules. Thus, it seemed that below the thickness of 70 nm, the sensitivity was governed by microstructure rather than by film thickness. [Pg.374]

Routes to monomeric , mononuclear , monolanthanide alkoxides, enolates, siloxides and aryloxides - an expanded title which will put the scope of the article in a more concrete form. The synthesis of mononuclear alkoxides, in particularly homoleptic derivatives [1], was decisively stimulated by the discovery of high temperature superconducting ceramics based on YBa2Cu307<, where yttrium represents the lanthanide elements [2]. The support of volatile and highly soluble molecular precursors is a prerequisite for synthesizing thin films of these materials by means of MOCVD [3] and sol gel processes [4], respectively. More recently, lanthanide alkoxide reagents became established in... [Pg.151]

Meade (26), who made use of an alkali metal alkoxide as a catalyst at 100°C at atmospheric and shghtly above atmospheric pressure. Further refinement was made by Tesoro (27), who conducted the reaction at 55-75°C and a vacuum of 4—8 kPa. Schurman (28) patented a continuous process for making alkanolamide, which makes use of a thin film reactor. It is claimed the short contact time in the reactor produces a high-purity alkanolamide (29). [Pg.3020]

Silica in the form of thin films as well as oxide monoliths, fibers, and powders can be prepared from sol-gel method. In contrast with the fabrication of conventional inorganic glasses at much higher melting temperature, sol-gel processing is performed at low temperatures to produce oxide materials with desirable hardness, optical transparency, chemical durability, tailored porosity, and thermal resistance. The sol-gel method involves formation of a colloidal suspension (sol) and gelation to form a network in a continuous liquid phase (gel). One starts with an aqueous solution containing oxides or alkoxides, mutual solvent, and catalyst. Usually an external catalyst is added like mineral acids and ammonia as well as acetic acid, KOH, amines, KF, and HF for rapid and... [Pg.1817]

The first report of a wet chemical processing of ferroelectric thin film was by Fukushima et al. in 1975 [18]. They reported the use of a mixed alkoxide and organic salt precursors in the fabrication of BaTiOs film. Application of sol-gel processing for the PZT thin films was started in 1984 by Wu et al. [19] and Fukushima et al. [20] and followed by Budd et al. in 1985 [21]. More recently, continuing efforts in the processing of PZT family thin films by sol-gel and MOD methods can also be found in the literature [22-27]. [Pg.482]


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See also in sourсe #XX -- [ Pg.463 ]




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