AlGaN/GaN heterostructures

FIGURE 5 2DEG mobility, m as a function of temperature, T, measured in the dark (solid squares) and under illumination conditions (open squares) for an AlGaN/GaN heterostructure. For a better illustration, the 2DEG mobilities obtained at the elevated temperatures are shown in the inset. After [11],... 

Layer structure 200 nm n-GaN channel [2] Dielectric insulator/ GaN/AlGaN GaN 1.5 - 2.0 pm implanted p-gate, n-channel 14] AlGaN/GaN heterostructure... 

The piezoelectric field induces charge at the heterojunction. Even mi unintentionally doped (with low background doping density) AlGaN/GaN heterostructure has a piezoelectric-induced sheet charge in the GaN channel, which is found by electrostatic analysis to be... 

It has been shown that contactless electroreflectance spectroscopy is an excellent experimental technique to study the built-in electric field in AlGaN/GaN heterostructures as well as the band gap discontinuity in GalnNAsSb/GaAs quantum wells. 

ELECTRICAL AND OPTICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURES WITH 2D ELECTRON GAS GROWN BY MOCVD ON Si (111) SUBSTRATES... 

Two types of high electron mobility transistors (HEMTs) with 2D electron gas were made from AlGaN/GaN heterostructures grown by MOCVD on Si (111) substrates, and their electrical DC properties were compared. Optical study, namely photoluminescence, photoreflection and reflection spectroscopy of the structures was performed. The strain values in GaN layers (6.6 and 1.7 kBar) and electric field strength near the heterointerface (470 and 270kV/cm) were determined. A correlation between the HEMTs DC characteristics and the optical properties of GaN layers was demonstrated. 

Eickhoff, M., Schalwig, J., Steinhoff, G., Weidemann, O., Gorgens, L., Neuberger, R., Hermann, M., Baur, B., Muller, G. and Ambacher, O. (2003) Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures-part B Sensor applications , physica Status Solidi (c), 6,1908-1918. 

Iwakami,S.,Yanagihara,M.,Machida,O.,Chino,E.,Kaneko,N.,Goto,H. and Ohtsuka, K. (2004) AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrates for large-current operation , Japanese Journal of Applied Physics Parti-Letters Express Letters, 43(7A), L831-L833. 

Matsuo, K., Negoro, N., Kotani, J., Hashizume, T. and Hasegawa, H. (2005) Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure Applied Surface Science, 244(1-4), 273-276. 

Wang, H., Anderson,T., Kang, B., Ren, F., Li, C., Low, Z., Lin, J., Gila, B., Pearton, S., Osinsky, A. and Dabiran, A. (2007a) Stable hydrogen sensors from AlGaN/ GaN heterostructure diodes with HBj-based Ohmic contacts . Applied Physics Lehm, 90(25), 252109. 

---