Accumulation of defects

A two-dimensional simulation has also been performed of the accumulation of defects with an asymmetric recombination region [113] chosen in the form of a rectangle with vp = a x b. The anisotropic case in which the... 

In their turn, the equations (4) and (5) correspond to taking account of two more terms of this expansion respectively. (It was erroneously stated in [41] that the coefficient of the cubic term of equation (5) equals -0.01, which was then copied in all the experimental studies that used this approximation.) However, it is not always acknowledged that these two equations also assume the absence of aggregation of defects the authors [41] propose using of equation (5) up to the saturation concentration. Therefore it is not justified to extrapolate the rate of accumulation of defects to a zero value for obtaining n0 from equations (3)-(5) (cf. [43,44,46]). Actually the saturation concentration can exceed several times the value predicted by these equations. 

Kowald, A. and Kirkwood, T. B. L. Accumulation of defective mitochondria through delayed degradation of damaged organelles and its possible role in the ageing of post-mitotic and dividing cells. Journal of Theoretical Biology 202 145-160 2000. 

The almost horizontal portions of the hysteresis loop represent saturated states in which the crystal is a single domain during a cycle. Defects and internal strains within the crystallites impede the movement of domain walls. Domain wall mobility has been found to decrease with time (even without an applied mechanical or electrical stress or thermal changes). This is due to internal fields associated with charged defects, redistribution of lattice strains, and accumulation of defects at domain walls. 

When remedial maintenance can most conveniently be accomplished by substituting a proven identical spare for the defective plant item, this should be done in accordance with established procedures such as those for issuing work order authorizations. A defective plant item not suitable for subsequent repair should be disposed of by a suitable process that prevents its reuse. The accumulation of defective components in work areas should not be allowed. 

Because of random distribution of the mitochondria to the daughter cells during cell division accumulation of defective mitochondria in some cells is still possible if neither mitochondrial population is favored during biogenesis. This model is depicted schematically in Fig. 15. With a certain probability the defective mitochondrial type will be distributed unevenly between the two daughter cells. After many cell divisions this leads to a concentration of defective mitochondria in a few cells. The consequences of this may be incompatible with normal cell function. However, since this condition develops slowly, the cell containing many damaged mitochondria may adapt to the new situation and survive. 

A series of numerical simulations were also conducted, in which, in addition to the masses and the number of atoms of A, the A-A and A-B interaction parameters also differed in temperature, deformation rate, and initial conditions,. As in the experiments with a single-component system [71], the deformation first emerged in the elastic region, followed by the formation and accumulation of defects. The subsequent restructuring of the lattice was accompanied by stress relaxation. 

For reception of profiles of not round cross-section most often use technological process of repeated drawing. Key parameter at designing of process of the drawing, allowing to supervise break and to predict process of accumulation of defects, pressure of drawing [2-4], which should... 

If imder the conditions of the experiment, the defects produced during the first phase are very mobile, they can diffuse inside the initial solid and their precipitation may take a certain time during which the initial sohd loses (or gains) gas. According to the solids, precipitation is observed at the end of a more or less important accumulation of defects. 

In the following section it will be discussed in more detail to what extent the orientation distribution of chain segments, the ensuing distribution of axial chain stresses, and the gradual accumulation of defects through successive breakage of chains can be held responsible for the discrepancy between actual and theoretical strength. 

Whenever the random accumulation of defects in one site has grown to such a size that subsequent fractures will preferentially occur at that site, one has reached the end of the phase of fracture initiation and the beginning of (thermal) crack growth... 

Voids at the interface may be formed by the growth process during interface formation, by the accumulation of defects due to mass transport processes, or by the loss of material by diffusion. Voids at the interface are evidenced by low adhesion, high contact resistance, and possibly low thermal conductivity. Interfacial voids are studied by careful TEM sample preparation and by surface analysis of the failure surfaces after failure. 

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