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Acceptor surface level

We consider first the effect of illumination on the adsorptivity (75). For the sake of simplicity we limit ourselves to the case when the chemisorbed particles are of a purely acceptor nature. Let them correspond to the acceptor surface levels A in Fig. 24. The level FF in this figure depicts the... [Pg.242]

Fig. 5.2-65 Sketch of the graphical solution of the equation fisc + fiss = 0, for an intrinsic semiconductor (Wb = 0) with a single acceptor surface level at reduced energy uj. Two values of acceptor densities are shown. In case of b 7 0,... Fig. 5.2-65 Sketch of the graphical solution of the equation fisc + fiss = 0, for an intrinsic semiconductor (Wb = 0) with a single acceptor surface level at reduced energy uj. Two values of acceptor densities are shown. In case of b 7 0,...
On the other hand, in the case of acceptor surface states at a single energy level Ess, qss is given by... [Pg.18]

Fig. 6 Molecular orbital (HOMO-LUMO) interaction of two molecules (a) and of a molecule with semiconductor surface states (b-d). Different results are obtained after interaction with shallow acceptor states (occupied surface states close to the VB) (b), deep acceptor states (occupied states close to midgap) (c), and shallow donor states (close to the CB) (d). In general, the donor HOMO level is slightly stabilized by the interaction, whereas the acceptor LUMO level is slightly destabilized. Fig. 6 Molecular orbital (HOMO-LUMO) interaction of two molecules (a) and of a molecule with semiconductor surface states (b-d). Different results are obtained after interaction with shallow acceptor states (occupied surface states close to the VB) (b), deep acceptor states (occupied states close to midgap) (c), and shallow donor states (close to the CB) (d). In general, the donor HOMO level is slightly stabilized by the interaction, whereas the acceptor LUMO level is slightly destabilized.
One important consequence of the presence of electronic surface states is that the electron bands are modified at the surface even in the absence of a space charge or electron acceptor or donor species (such as adsorbed gases). The shape of the conduction band at the surface of an intrinsic semiconductor in the presence of electron-donor and electron-acceptor surface states is shown in the energy level diagrams in Figs. 34a and 34b. [Pg.336]

FIGURE 34 Energy-level diagrams for an intrinsic semiconductor in the presence of (a) electron-donor or (b) electron-acceptor surface states. [Pg.336]

Modeling of the reaction center inside the hole of LHl shows that the primary photon acceptor—the special pair of chlorophyll molecules—is located at the same level in the membrane, about 10 A from the periplasmic side, as the 850-nm chlorophyll molecules in LH2, and by analogy the 875-nm chlorophyll molecules of LHl. Furthermore, the orientation of these chlorophyll molecules is such that very rapid energy transfer can take place within a plane parallel to the membrane surface. The position and orientation of the chlorophyll molecules in these rings are thus optimal for efficient energy transfer to the reaction center. [Pg.244]

Figure 6.14d shows the electron donation interaction (electrons are transferred from the initially fully occupied 5a molecular orbitals to the Fermi level of the metal, thus this is an electron donation interaction). Blyholder was first to discuss that CO chemisorption on transition metal involves both donation and backdonation of electrons.4 We now know both experimentally7 and theoretically96,98 that the electron backdonation mechanism is usually predominant, so that CO behaves on most transition metal surfaces as an overall electron acceptor. [Pg.302]

Only if one takes into account the solvent dynamics, the situation changes. The electron transfer from the metal to the acceptor results in the transition from the initial free energy surface to the final surface and subsequent relaxation of the solvent polarization to the final equilibrium value Pqj,. This brings the energy level (now occupied) to its equilibrium position e red far below the Fermi level, where it remains occupied independent of the position of the acceptor with respect to the electrode surface. [Pg.651]

Further studies were carried out on the Pd/Mo(l 1 0), Pd/Ru(0001), and Cu/Mo(l 10) systems. The shifts in core-level binding energies indicate that adatoms in a monolayer of Cu or Pd are electronically perturbed with respect to surface atoms of Cu(lOO) or Pd(lOO). By comparing these results with those previously presented in the literature for adlayers of Pd or Cu, a simple theory is developed that explains the nature of electron donor-electron acceptor interactions in metal overlayer formation of surface metal-metal bonds leads to a gain in electrons by the element initially having the larger fraction of empty states in its valence band. This behavior indicates that the electro-negativities of the surface atoms are substantially different from those of the bulk [65]. [Pg.85]

It was shown in [98] that during acceptor adsorption in a broad band semiconductor of -type characterized by availability of an a priori surface-adjacent depletion zone developing depletion of BSS levels slows... [Pg.46]

When a A = 1849 A light acts on an ammonia molecule, the latter breaks into a hydrogen atom and an NH2 radical [13]. At the zinc oxide surface the former particle is an electron donor, whereas the latter one is an acceptor. Experiments indicate that in photolysis of ammonia in a vessel shown in Fig. 4.6. only hydrogen atoms can be detected at every level of the vessel, starting from the source. This experimental result can be accounted for by the fact that, even in presence of such acceptors as... [Pg.230]


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See also in sourсe #XX -- [ Pg.1023 ]

See also in sourсe #XX -- [ Pg.1023 ]




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Acceptor level

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