Acceptor level in semiconductor

The donor electron level, cd, which may be derived in the same way that the orbital electron level in atoms is derived, is usually located close to the conduction band edge level, ec, in the band gap (ec - Ed = 0.041 eV for P in Si). Similarly, the acceptor level, Ea, is located close to the valence band edge level, ev, in the band gap (ea - Ev = 0.057 eV for B in Si). Figure 2-15 shows the energy diagram for donor and acceptor levels in semiconductors. The localized electron levels dose to the band edge may be called shallow levels, while the localized electron levels away from the band edges, assodated for instance with lattice defects, are called deep levels. Since the donor and acceptor levels are localized at impurity atoms and lattice defects, electrons and holes captured in these levels are not allowed to move in the crystal unless they are freed from these initial levels into the conduction and valence bands. 

Equations (89)-(91) also may be applied to donor or acceptor levels in semiconductors so that the expressions for the equilibrium constants of ionization reactions such as Eqs. (49), (50), and (53)-(56)... 

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See also in sourсe #XX -- [ ]

See also in sourсe #XX -- [ , ]

See also in sourсe #XX -- [ , ]

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