Absorption Near Edge Structure

EXAFS is part of the field of X-ray absorption spectroscopy (XAS), in which a number of acronyms abound. An X-ray absorption spectrum contains EXAFS data as well as the X-ray absorption near-edge structure, XANES (alternatively called the near-edge X-ray absorption fine structure, NEXAFS). The combination of XANES (NEXAFS) and EXAFS is commonly referred to as X-ray absorption fine structure, or XAFS. In applications of EXAFS to surface science, the acronym SEXAFS, for surface-EXAFS, is used. The principles and analysis of EXAFS and SEXAFS are the same. See the article following this one for a discussion of SEXAFS and NEXAFS. 

Figure 2 Molybdenum K-edge X-ray absorption spectrum, ln(i /i ) versus X-ray energy (eV), for molybdenum metal foil (25- jjn thick), obtained by transmission at 77 K with synchrotron radiation. The energy-dependent constructive and destructive interference of outgoing and backscattered photoelectrons at molybdenum produces the EXAFS peaks and valleys, respectively. The preedge and edge structures marked here are known together as X-ray absorption near edge structure, XANES and EXAFS are provided in a new compilation of literature entitled X-rsy Absorption Fine Structure (S.S. Hasain, ed.) Ellis Norwood, New York, 1991.

The X-ray absorption fine structure (XAFS) methods (EXAFS and X-ray absorption near-edge structure (XANES)) are suitable techniques for determination of the local structure of metal complexes. Of these methods, the former provides structural information relating to the radial distribution of atom pairs in systems studied the number of neighboring atoms (coordination number) around a central atom in the first, second, and sometimes third coordination spheres the... 

X-ray absorption near edge structure (XANES) spectroscopy is a non-destructive and sensitive probe of the coordination number and geometry as well as of the effective charge of a chosen atom within a molecule and therefore also of the formal oxidation number. Recently, there have been a number of XANES studies at the sulfur K-edge demonstrating the sensitivity of... 

Evidence for the first reason was demonstrated in X-ray photoelectron spectroscopy (XPS) or X-Ray Absorption Near Edge Structure (XANES) studies, as well as by many voltammetric studies. ... 

If a vacant site is occupied by another Nb atom, such that it is a dimer, new catalysts may be designed. The Nb dimer catalyst(2) was prepared by reaction of [Nb(ri -C5H5)H-p-(T, Ti -CsH4)]2 with a Si02 at 313 K, followed by treatment with 02 at 773 K. A proposed structure(2) was characterized by EXAFS, x-ray absorption near-edge structure(XANES), FT-IR, UV-vis, and XPS, which shows Nb-Nb (coordination number 0.9) and Nb-Si(2.3)... 

XANES X-ray absorption near edge structure spectroscopy... 

In general, several spectroscopic techniques have been applied to the study of NO, removal. X-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance (EPR), nuclear magnetic resonance (NMR), extended X-ray absorption fine structure (EXAFS) and X-ray absorption near-edge structure (XANES) are currently used to determine the surface composition of the catalysts, with the aim to identify the cationic active sites, as well as their coordinative environment. 

In order to gain information on the environments of certain atoms in dissolved species, in melts or in solids (crystalline or noncrystalline), which are not accessible to diffraction studies for one reason or another, X-ray absorption spectrometry (XAS) can be applied, with the analysis of the X-ray absorption near-edge structure (XANES) and/or the extended X-ray absorption fine structure (EXAFS). Surveys of these methods are available 39,40 a representative study of the solvation of some mercury species, ElgX2, in water and dimethylsulfoxide (DMSO) by EXAFS and XANES, combined with quantum-chemical calculations, has been published.41... 

Fig. 1. X-ray absorption near-edge structure (XANES) of reference compounds with various As valence states and mine tailings samples. The As K-edge excitation potential for arsenic in the ground state (As0) is at 11868 eV. The As K-edge excitation potential increases with increasing valence state.

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