Zinc sulfide films precursors

Lindroos, S. Charreire, Y. Bonnin, D. Leskela, M. 1998. Growth and characterization of zinc sulfide thin films deposited by the successive ionic layer adsorption and reaction (SILAR) method using complexed zinc ions as the cation precursor. Mater. Res. Bull. 33 453—459. 

Zinc and cadmium dialkyldithiophosphinates, M(S2PR2)2 (M = Zn, Cd R = Bu1),67 and their phenanthroline and bipyridyl adducts,68 which are of interest as precursors for chemical vapor deposition (CYD) of metal sulfide films, have been prepared and structurally characterized. 

Krunks et al. [119] studied zinc thiocarbamide chloride as a single-source precursor for obtaining thin films of zinc sulfide by spray pyrolysis. By heating this compound to 1200 C, they demonstrated that cubic ZnS (sphalerite) forms below 300 °C and stays in this form until 760 C, when it transforms to hexagonal ZnS (wurtzite). 

The first deposition experiments using SILAR were performed to grow zinc and cadmium chalcogenide films.1 Metal salt solutions and sodium sulfide were used as precursors in most experiments. Table 8.2 provides a more complete... 

Mixed alkyl/dithio- or diselenocarbamates are potential precursors to II-VI materials as they provide access to lower deposition temperatures. Zinc selenide, cadmium sulfide, and cadmium selenide thin films have been deposited from compounds of the type [RM(E2CNEt2)]2 (79, M = Zn, E = S, R = Me 80, M = Cd, E = S, R = Me 81, M = Cd, E = Se, R = Me 82, M = Cd, E = S, R = CH2CMe3 83, M = Cd, E = Se, R = CH2CMe3). The films were superior and higher growth rates were obtained as compared with those... 

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