Zinc Selenide ZnSe

Utilizing low-oxidation selenium precursors appears to be particularly suited for obtaining single-phase ZnSe deposits. Results have been presented of ZnSe electrosynthesis from alkaline selenosulfate solutions of complexed Zn(II) [108]. 

The redox behavior of the SeSO -Zn-EDTA system has been discussed on the basis of Pourbaix and solubility diagrams [11], Different complexes and substrates have been employed in order to optimize the electrodeposited thin films. By the selenosulfate method it is generally possible to grow ZnSe with an almost stoichiometric composition however, issues of low faradaic efficiency as well as crystallinity and compactiveness of the product, remain to be solved. Interestingly, in most reports of photoelectrochemically characterized ZnSe electrodeposits, the semiconductor film was found to be p-type under all preparation conditions (ZnSe is normally n-type unless deliberately doped p-type). 

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Zinc sulfide, ZnS, sphalerite (zinc blende) zinc sulfide, ZnS, wurtzite zinc selenide, ZnSe zinc telluride, ZnTe, cubic zinc telluride, ZnTe, hexagonal zinc polonide, ZnPo zinc aluminum selenide, ZnAl2Se4 zinc indium selenide, ZnIn2Se4 zinc indium telluride, Znhi2Te4. 

The attenuated total reflection (ATR) infrared cell should be equipped with a single bounce element made of zinc selenide (ZnSe), diamond, or equivalent material, with capacity of 50 pL or less. It must be capable of maintaining a constant temperature of 65° 2°C. 

Zinc selenide (ZnSe) doped with Ga has some Ga atoms in place of Zn atoms and is an n-type semiconductor. Draw an MO energy-level diagram for doped ZnSe, show the population of the bands, and explain why Ga substitution gives an n-type semiconductor. 

Attenuated total reflection infrared (IR) spectra are obtained by pressing the sample against an internal reflection element (IRE) [e.g., zinc selenide (ZnSe) or germanium (Ge)]. IR radiation is focused onto the end of the IRE. 

Zinc selenide ZnSe 2.42 0.5-14.3 May react with acids to H2Se... 

The sample is placed in contact with the internal reflection element, the light is totally reflected, and the sample interacts with the evanescent wave resulting in the absorption of radiation by the sample. The internal reflection element is made from a material with a high refractive index, e.g., zinc selenide (ZnSe) or silicon (Si). 

The crystals used in ATR cells are made from materials which have low solubility in water and are of very high refractive index. Such materials include zinc selenide (ZnSe), germanium (Ge) and thallium/iodide (KRS-5). The properties of these commonly used materials for ATR crystals are summarised in Table 3.3. Different designs of ATR cells allow both liquid and solid samples to be examined. 

The IR spectra were obtained using a Nicolet Magna 550 Series II FT-IR (Midac Co., USA) equipped with 45° zinc selenide (ZnSe, =2.4) attenuated total reflectance (ATR). Spectra were collected for 32 scans at a resolution of 16 cm between 650 and 4000 cm. The spectrometer was linked to a PC equipped with Omnic E.S.P. 5.2 software to allow the automated collection of IR spectra and to integrate the peak area. 

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