Wide gap emitter transistor

It was natural that photoeffects were explored in heterojunctions and new photodevices considered, see for example Kruse et al. [2.45,46] and Perfetti et al. [2.47]. However, the development of Si technology removed the need for a wide gap emitter transistor, and the problem of preparing heterojunctions with electrical and optical properties conforming to the ideal caused a drastic decrease in the interest in this area. There remains some interest in heterojunctions prepared from alloy semiconductors, e.g., GaAs-Gui and PbTe-... 

Two types of wide gap emitter transistors—an nBP-pSi-nSi structure and an nBP nSi-pSi-nSi structure having a cascade junction nBP nSi-pSi emitter—were fabricated. The common emitter current gain p in the latter transistor is about 16 and the injection efficiency of the... 

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