Vapor Deposition of Films Containing Group 2 Elements

CHEMICAL VAPOR DEPOSITION OF FILMS CONTAINING GROUP 2 ELEMENTS 

Although a number of Group 2 metal amides and phosphides have been prepared that are potentially suitable as precursors for CVD, to our knowledge they have not been utilized for this purpose. 

Summary of Conditions and Results of CVD of Metal Fluoride Films 

Numbers in parentheses are the temperatures to which the precursor was heated. 

The species Ba[l,2,3,4-(/-Pr)4C5H]2 has been reported to have similar volatility as Ba(dpm)2 and Ba(fod), but the use of this compound for CVD of Ba-containing films has not been reported. Schulz and Marks have reported the growth of BaPbOj films using the more sterically encumbered species Ba[(/-Bu)3C5H2]2 as a Ba source. The donor functionalized derivatives M[C5H4 (CH2) ER ]2, where M = Ca, Sr, Ba ER = OMe, OEt, and NMej, have also been prepared but not yet successfully used to transport Ba for the deposition of ceramic superconductor films. 

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IV. Chemical Vapor Deposition of Films Containing Group 2 Elements. . 309... 

Chemical vapor deposition is a process that critically depends on the chemistry of molecular species and therefore provides an opportunity for chemists to make a major contribution to an important area of materials science. This is exacerbated in the case of deposition of Group 2 metal-containing films because it is particularly difficult to prepare molecular compounds of the heavier elements as precursors with all the appropriate characteristics. 

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