Valence band vapor phase

Hamilton et al. (1979) have shown that a level at 0.75 eV above the valence band (M1 in Figs. 5 and 7) is the dominant recombination center in epitaxial layers and controls the minority-carrier lifetime in -type GaP. Another state at v + 0.92 eV has been shown to be caused by the persistent presence of Ni in vapor phase epitaxial (VPE) GaP (Dean et al, 1977). 

Based on the correlation of electron transitions and ionization potentials, the transition at 207 nm was assigned as the A,<-A (714 <-712) valence transition <86JST(140)253>. The spectra of halothiophenes has been recorded between 200-225 nm. The band system observed in this region in the vapor phase, is absent in solution spectra and are assigned to Rydberg transitions. 

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