Uniaxial stress studies Raman bands

IR absorption and Raman spectroscopy are also well suited to the application of uniaxial stress techniques. Stress-induced splittings of the vibrational bands give information about the symmetry of the defect. In favorable cases, it has been possible to determine the kinetics of the H motion between equivalent sites around an impurity from a study of the alignment of the H-related complexes that can be induced by stress. 

The uniaxial stress dependence of the IR absorption and Raman bands due to the B—H complex have been studied by Bergman et al. (1988b) and by Stutzmann and Herrero (1988a,b) and Herrero and Stutzmann (1988, 1989). The observed stress splittings and their interpretation for the two studies do not agree. Here, the two experiments and their interpretation will be summarized. While the differences between the experiments will be discussed, they will not be resolved. 

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