Tunneling OLEDs

In the last century, many microstructural characterization techniques have been developed, such as electron microscopy, atomic tunneling microscopy, photoelectron spectroscopy, Raman spectroscopy, etc. The structure of the OLED-based displays is such that many pixels are arranged orderly in the x-y plane. The size and number of pixels determine the resolution and size of the display. Along the z-axis, several layers are stacked on each other. These layers... 

Fowler-Nordheim tunneling of, 22 258 in HBTs, 22 167-168 Moore s law and device scaling and, 22 254 in RTDs, 22 170-171 in semiconducting silicon, 22 485-486 in semiconductors, 22 233, 237-239 in SETs, 22 171-172 in single layer OLEDs, 22 215-216 in spinel ferrites, 11 60-61 in the superconducting state, 23 804 Electron spectrometer system, components of, 24 100-101... 

The voltage dependence of the injection-limited current resulting from this treatment, as well as experimentally observed I(V) characteristics are Fowler-Nordheim (FN)-like, i.e., similar to that obtained by tunneling through a triangular barrier. This similarity suggested a number of treatments that analyzed injection into OLEDs in terms of this model, which predicts that... 

Figure 23 Energy level diagrams for OLED materials. Only the frontier orbitals are considered, (a) Transition from the molecular orbital energies to narrow bands in the solid state to the parallelogram image of the HOMO and LUMO energies are shown, (b) The effect of an applied bias on the energy levels (left). The red arrows illustrate carrier injection via tunneling (tu), thermionic emission (te), or midgap states (mg). The midgap states are shown in blue.

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