Transmission silicon nitrides

Kleebe, H.-J. and Cinibulk, M.K., (1993), Transmission electron microscopy characterization of a ceria-fluxed silicon nitride , J. Mater. Sci. Lett., 12 (2), 70-72. 

Kleebe, H.-J., Corbin, N., Willkens, C. and Rtihle, M., (1990), Transmission electron microscopy studies of silicon nitride/silicon carbide interfaces , Mat. Res. Soc. Symp. Proc., 170, 79-84. 

Ziegler, A., Kisielowski, C., Hoffmann, M.J. and Ritchie, R.O., (2003), Atomic resolution transmission electron microscopy of the intergranular structure of a Y203-containing silicon nitride ceramic , J. Am. Ceram. Soc., 86 (10), 1777-1785. 

A report has appeared (12) on the formation of a high surface area amorphous silicon nitride from a solution phase reaction of tetrachloro-silane with liquid ammonia. In our hands (7) this reaction gave a material with a surface area of 90 m g both the form of the BET isotherm and transmission electron microscopy indicated that the surface area was derived from the external surface of small particles, i.e. a non-porous material. An... 

Figure 7.6 Transmission electron micrograph showing the presence of a grain boundary glassy phase in silicon nitride. (Courtesy of X. G. Ning and D. S. Wilkinson, McMaster University.)...

Figure 7.8 shows a high-resolution transmission electron micrograph of the grain boundary liquid phase in silicon nitride. Using such observations, Wilkinson et a/. (1991) have verified that redistribution of the liquid does occur. Grain boundary sliding can also be coupled with diffusional creep, as shown in Fig. 7.9. As grains elongate in the tensile direction by diffusional flow, adjacent...

For attenuated phase shift lithography, light blocking materials, which have phase shifting characteristic, such as molybdenum silicide (MoSi), aluminum/aluminum nitride cermet, understoichiometric silicon nitride, tantalum silicon oxide composite, are used. All these materials record 4 15 % transmission at UV light... 

Figure 5.12. IR transmission spectmm of thin silicon nitride film produced by CVD of SiH4 + N2 at 65°C. Reprinted, by permission, from T. Inukai and K. Ono, Jpn. J. Appl. Phys. 33, 2593 (1994). Copyright 1994 Publication Board of Japanese Journal of Applied Physics.

Dielectric materials such as silicon nitride, silicon dioxide, polymers and glass are normally used for the fabrication of solid-state nanopore devices [25]. The pore conductance may be expected to be frequency-dependent, perhaps similar to the transmission line model by de Levie (for closed pores) [40] [41]. For simplicity (and since the DC case is much more common), this aspect is typically ignored. In simple terms, a nanopore device as shown in Fig. 14 A can then be represented by a combination of solution (or access) resistance R the frequency-independent pore resistance Rp re and a device capacitance Cp (or alternatively a constant-phase element (CPE)), cf. the... 

The earliest work on imaging block copolymer microdomains relied heavily upon transmission electron microscopy (TEM), and it still proves to be a useful tool to this day [19]. Samples are either microtomed or solvent cast to produce thin (ca. 100 nm) sections. PS-PI or PS-PB samples can be stained with osmium tetroxide to increase contrast. Osmium tetroxide reacts selectively with unsaturated double bonds such as found in PI or PB microdomains so as to provide mass contrast [21]. Unfortunately, TEM requires that the samples be freestanding or transferred to a transparent support (e.g. carbon), a cumbersome and time-consuming process that is largely incompatible with silicon or GaAs wafers. While silicon nitride membranes can be employed for TEM, these expensive and delicate structures are not easily accessible to all researchers [22]. 

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