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Total density of states

Ed is the center of gravity of the d band, 9 E) the total density of states and Ep the Fermi energy. [Pg.372]

It is well known that in bulk crystals there are inversions of relative stability between the HCP and the FCC structure as a fxmction of the d band filling which follow from the equality of the first four moments (po - ps) of the total density of states in both structures. A similar behaviour is also expected in the present problem since the total densities of states of two adislands with the same shape and number of atoms, but adsorbed in different geometries, have again the same po, pi, P2/ P3 when the renormalization of atomic levels and the relaxation are neglected. This behaviour is still found when the latter effects are taken into account as shown in Fig. 5 where our results are summarized. [Pg.380]

Top DOS contributions of the different bands of a PtX - chain and their superposition to give the total density of states. Bottom COOP contributions of the different bands and their superposition to give the crystal orbital overlap population... [Pg.98]

Figure4.ll Bottom optimized ions HSE03 total density of states and integrated number of defect states (An) for Ovac. The integrated charge density corresponding to the defect states is shown in the top panel from two different perspectives for the same isocontour value (green 10 6eA 3). O red, Ti cyan (unpublished work). Figure4.ll Bottom optimized ions HSE03 total density of states and integrated number of defect states (An) for Ovac. The integrated charge density corresponding to the defect states is shown in the top panel from two different perspectives for the same isocontour value (green 10 6eA 3). O red, Ti cyan (unpublished work).
Similarly, the second moment of the total density of states per orbital,... [Pg.203]

Fig. 132 (a) Overlapping bands forming a pseudogap, with localized states at the Fermi energy, (b) Total density of states, with localized states shaded. [Pg.56]

Fig. 4.7 Total density of states and density of current carriers in the highly correlated electron gas of Brinkman and Rice (Mott 1971). Fig. 4.7 Total density of states and density of current carriers in the highly correlated electron gas of Brinkman and Rice (Mott 1971).
Our model for the density of states is thus as in Fig. 4.7. The total density of states is mainly due to spin fluctuations, and has a maximum for n=1, where n is the number of electrons per atom. The curve for current carriers needs to be used for calculating thermopower and resistance the experimental evidence discussed in the following chapters suggests, however, that the Hall coefficient RH is given by the classical formula 1 jnec. [Pg.136]

Figure 18. Total density of states for palladium metal... Figure 18. Total density of states for palladium metal...
For a strongly degenerate carrier liquid fIMb7 1, as well as neglecting the spin-orbit interaction, xc = p/4, where p is the total density-of-states for intra-band charge excitations, which in the 3D case is given by p =. In general, however, xc... [Pg.53]

The orbital interaction which is responsible for the adsorption of molecular oxygen on the Ag(110) surface is mainly between silver dxz and 7t 0-0- The interaction between the silver surface and molecular oxygen leads to a donation of 1.55 electrons into the 7t o o from surface because the Fermi level of the surface is located higher in energy than n oo In Figure 1 is shown the contribution for the adsorbed molecular oxygen in 2 to the total density of states (DOS) and also the Ag-O and 0-0 crystal orbital overlap population (COOP) curves. [Pg.379]

Figure 1 2 5. Panel (a) The total density of states (DOS) of a superlattice of nanotubes. The partial DOS of each subband n=l,2,3 gives a peak near the bottom of each subband. Panel (b) shows the details of the DOS near the bottom of the third subband as function of the reduced Liftshitz parameter "z" = (EF — Ec)/W where W=36.6 meV is the dispersion of the third subband in the y direction of the superlattice, transversal to the nanotube direction. The type (I) ETT occurs at the subband edge ( z =-l) where the partial DOS of the third subband gives the step-like increase of the DOS. The type (III) ETT occurs at z =0 where the DOS shows the main peak... Figure 1 2 5. Panel (a) The total density of states (DOS) of a superlattice of nanotubes. The partial DOS of each subband n=l,2,3 gives a peak near the bottom of each subband. Panel (b) shows the details of the DOS near the bottom of the third subband as function of the reduced Liftshitz parameter "z" = (EF — Ec)/W where W=36.6 meV is the dispersion of the third subband in the y direction of the superlattice, transversal to the nanotube direction. The type (I) ETT occurs at the subband edge ( z =-l) where the partial DOS of the third subband gives the step-like increase of the DOS. The type (III) ETT occurs at z =0 where the DOS shows the main peak...
Figure 1 2 5. Panel (a) The total density of states (DOS) of a superlattice of nanotubes. Figure 1 2 5. Panel (a) The total density of states (DOS) of a superlattice of nanotubes.
RRKM theory, an approach to the calculation of the rate constant of indirect reactions that, essentially, is equivalent to transition-state theory. The reaction coordinate is identified as being the coordinate associated with the decay of an activated complex. It is a statistical theory based on the assumption that every state, within a narrow energy range of the activated complex, is populated with the same probability prior to the unimolecular reaction. The microcanonical rate constant k(E) is given by an expression that contains the ratio of the sum of states for the activated complex (with the reaction coordinate omitted) and the total density of states of the reactant. The canonical k(T) unimolecular rate constant is given by an expression that is similar to the transition-state theory expression of bimolecular reactions. [Pg.169]

The assumption about a uniform probability for any distribution of the energy between the harmonic oscillators may now be used to determine the probability Pet >e (E). It can be expressed as the ratio between the density of states corresponding to the situation where the energy exceeds the threshold energy in the reaction coordinate and the total density of states at energy E, that is, N(E) of Eq. (7.36). [Pg.185]

It can be shown formally that the total density of states for two independent degrees of freedom with the densities N (E) and N2(E) is obtained as a convolution of the densities. [Pg.186]

The analysis of the DOS profile fully confirms this hypothesis. In Figure 7 contributions of metal s and d shells to the total density of states for the host Pd2, Rh2 and PdO clusters are given. The contribution of a 5s shell to the occupied part of the spectrum of the palladium dimer is much smaller than for other systems. In the case of 4d shells (Figure 7b) it is the rhodium dimer molecule where the large part of the d spectrum lies above the Fermi level while for the palladium dimer spectrum the main d contribution keeps well below the Fermi level. [Pg.364]

FIGURE 6.17 (a) Total density of states and the partial densities of states projected on selected atomic wave... [Pg.244]

As mentioned above, the support has three effects on the electronic structure of supported Pt particles. An increasing electron richness of the support oxygen atoms results in (i) a shift in the total density of states to higher energy, (ii) rearrangement of the s-p states within the particle from the particle-support interface to the particle surface and (iii) rehybridization of the valence band to more 6sp and less 5d character. A crucial question to answer is how these change in s,p and d-states influences the chemisorption of H and CHX on the Pt particles. [Pg.171]

FIGURE 2 Total density of states of (a) undoped, (b) Be-doped, (c) Mg-doped, (d) O-doped, and (e) Si-doped GaN crystals. [Pg.308]

FIGURE 4 (a) Total density of states for undoped GaN, (b) - (d) total and site-decomposed DOS for Si codoped GaN.Be and (e) - (g) total and site decomposed DOS for O-codoped GaN.Be. In the site-decomposed DOS for the two p-type codoped GaN samples, p states at each site are illustrated. [Pg.311]

Finally, if a system has been factored into parts a and jS, the total density of states may be obtained by convolution, viz. [Pg.338]

The total density of states (DOS) are obtained by summing of the partial DOS for the atoms in the central part of the structure models in order to reproduce the electronic structure of the bulk alloys as appropriately as possible. The number of the sampled atoms for the calculation of the amorphous alloys is typically 6 for one element. In case of crystals, a few atoms are sampled for calculation. [Pg.165]

Figure 14 The total density of states of a model c(2 x 2)CO-Ni(100) system (center), compared to its isolated four-layer Ni slab (left) and CO monolayer components. Figure 14 The total density of states of a model c(2 x 2)CO-Ni(100) system (center), compared to its isolated four-layer Ni slab (left) and CO monolayer components.
Figure 20 Total density of states (left), and Pt-H (middle) and Pt-Pt (right) crystal orbital overlap population curves for the eclipsed PtH,2- stack. Figure 20 Total density of states (left), and Pt-H (middle) and Pt-Pt (right) crystal orbital overlap population curves for the eclipsed PtH,2- stack.
Can we see this local, very chemical bonding construction in a delocalized band structure Most certainly. The calculated (extended Huckel) band structure and total density of states of a single Mn2P22 layer is illustrated in Fig. 27. [Pg.59]

Now that the qualitative aspects of surfaces are understood, we may use these ideas to address our problem of the connection between cluster MOs and bulk COs. Consider a crystalline him of a metal deposited on a planar support. Now the bulk, which constitutes the middle part of the him, can no longer be considered as inhnite. Surface states will dominate the total density of states if the thickness of the him is not large. In fact, in a thin him consisting of a few layers of atoms the bulk no longer exists and the total DOS is composed of surface states. The DOS should be narrower... [Pg.250]


See other pages where Total density of states is mentioned: [Pg.249]    [Pg.48]    [Pg.123]    [Pg.125]    [Pg.69]    [Pg.236]    [Pg.230]    [Pg.31]    [Pg.195]    [Pg.283]    [Pg.287]    [Pg.287]    [Pg.39]    [Pg.171]    [Pg.234]    [Pg.227]    [Pg.219]    [Pg.48]    [Pg.357]    [Pg.362]    [Pg.249]    [Pg.285]   
See also in sourсe #XX -- [ Pg.144 ]




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