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TMOS physical properties

Pajonk, G M, Rao, A V, Sawant, B M, Parvathy, N N (1997) Dependence of monolithicity and physical properties of TMOS silica aerogels on gel aging and drying conditions. J Non-Cryst Solids 209(1) 40-50. [Pg.74]

Layered compounds, in particular the transition-metal dichalcogenides (TMDs) and transition-metal oxides (TMOs), can be intercalated with a wide range of both organic and inorganic materials which may have a profound influence on the physical properties of the host compound [1]. The intercalation reaction in these compounds is driven by charge transfer from the intercalant to the host layered compound conduction band and thus electron-donating species can take place in such a reaction. The reversible ion-electron transfer reaction is classically represented by the scheme ... [Pg.93]

In this paper, physical and gas transport properties of HBPIs synthesized with various dianhydride monomers and their silica hybrid membranes prepared by sol-gel reaction with two kinds of alkoxysilanes, TMOS and methyltrimethoxysilane (MTMS), individually or simultaneously, are discussed. The methyl group of MTMS will prevent the formation of robust three-dimensional Si-O-Si network in the hybrid membranes. It is expected that the loose Si-O-Si network formed from MTMS induces unique physical and gas transport properties of the hybrid membranes. [Pg.144]

The precursors used in the sol-gel technique are mainly silicon alkoxides that possess high degree of purity. Many of these silicon derivatives are used in various types of solvents and catalysts to produce silica aerogels. Each of these produces varying degrees of physical, thermal, mechanical and optical properties in the aerogels. Some of these precursors used are Tetramethoxysilane (TMOS), tetraethoxysilane (TEOS), polyethoxydisilane (PEDS), methyltriethoxysilane (MTES), and many others (Rao et al. 2003, 2005 Soleimani Dorcheh and Abbasi 2008 Wei et al. 2011). However, they are very expensive and hazardous materials that are known to cause blindness. [Pg.10]


See other pages where TMOS physical properties is mentioned: [Pg.47]    [Pg.267]    [Pg.47]    [Pg.183]    [Pg.407]    [Pg.414]    [Pg.157]    [Pg.791]    [Pg.791]    [Pg.189]    [Pg.180]    [Pg.190]   
See also in sourсe #XX -- [ Pg.149 ]




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