Thin-film transistor configuration

Fig. 4.2. Schematic diagrams of bottom-gate, top-contact (a) and bottom-gate, bottom-contact (b) thin film transistor test configurations.

Whereas the Schottky barrier on undoped a-Si H is a useful configuration for experimental studies, the barrier on doped a-Si H may prove more important technologically. Because thin-film transistor action has been demonstrated, these devices may well form the basis of a new technology (Snell et al., 1981). An important aspect of this will be to form ohmic... 

Fig. 1 Various configurations of organic thin-film transistors...

There are three major classes of palladium-based hydrogen sensors [4], The most popular class of palladium-based sensors is based on palladium resistors. A thin film of palladium deposited between two metal contacts shows a change in conductivity on exposure to hydrogen due to the phase transition in palladium. The palladium field-effect transistors (FETs) or capacitors constitute the second class, wherein the sensor architecture is in a transistor mode or capacitor configuration. The third class of palladium sensors includes optical sensors consisting of a layer of palladium coated on an optically active material that transforms the hydrogen concentration to an optical signal. 

FIGURE 46.40. The drain-source current as the function of drain voltage of a thin PEDOT PSS/PVP film. The insert shows the polymer-based transistor configuration (after Park etal. [236]). 

Figure 11.3 Schematic device configuration of a field effect transistor using an organic thin film...

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