Thermally Stimulated Depolarization Currents in Amorphous Chalcogenides

3 TSDCs in Se-Based Amorphous Semiconductors Experimental Results 28 

Copyright 2010 by Elsevier Inc. All rights of reproduction in any form reserved. 

This section contains a review of results on the extensive study of defect states in the mobility gap of amorphous As- and Sb-containing chalcogenide semiconductors by relaxation technique. For extracting typical features, elemental selenium and simple compositions with relatively low content of arsenic and antimony are exemplified as possible. We will try to attribute TSDC peaks to charge carriers released from the respective trapping levels in the band gap of these materials. 

Usually, two basic types of relaxation techniques are used  

In this study, we emphasized the nonisothermal relaxation technique. 

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Thermally Stimulated Depolarization Currents in Amorphous Chalcogenides... 

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