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THE SELECTIVE TUNGSTEN APPROACH

The attractive features of a selective tungsten process in IC s were mentioned more than 10 years ago. Two problems have prevented a timely implementation  [Pg.51]

In this chapter we will discuss what chemistries have been tried, what problems have been found and what solutions have been proposed. Also such issues as barrier stability, contact resistance and leakage current will be mentioned. [Pg.51]

See other pages where THE SELECTIVE TUNGSTEN APPROACH is mentioned: [Pg.12]    [Pg.51]   


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