Temperature SiO2 Layers

Er-doped SiO2 layers composed of nc-Si formed by co-sputtering [7], plasma-enhanced chemical vapor deposition [8], or by ion implantation [9,10] exhibit the Er3+ PL at room temperature. The Er3+ excitation in nc-Si/SiO2 structure was found to be caused by the energy transfer from the excitons... 

Si wafers of n-type and (100) orientation covered by thermally grown 100 nm SiO2 layer fabricated at 1100 °C in dry O2, were used as substrates. The wafers were loaded into an oil free evaporation chamber (Varian VT-460), and the system was evacuated down to lxlO 8 Torr. Ge ingot of 99.999 % purity was supported on a molybdenum plate, and it was evaporated using an electron gun, at an evaporation rate of 0.01-0.03 nm/s, at a pressure of lxlO"7 Torr. During evaporation, and for an additional 1 min after this process, the substrate temperature was kept at 350 °C. The temperatures were monitored by small-heat-capacity Ni-NiCr thermocouples, while the film thicknesses were measured by a vibrating quartz probe. For this study, four different samples have been prepared with different Ge evaporation times of 25, 50, 75, and 100 s for samples No. 1, 2, 3, and 4, respectively. After germanium evaporation, the samples were moved to a cold place inside the vacuum chamber. 

To a solution of the P-hydroxy-/V-methyl-O-methylamide (0.272 g, 1.55 mol) in tetrahydrofuran (THF) (30 mL) were added carbon disulfide (6.75 mL, 112 mmol) and iodomethane (6.70 mL, 108 mmol) at 0 °C. The mixture was stirred at this temperature for 0.25 h, and then sodium hydride (60% suspension in mineral, 136.3 mg, 3.4 mmol) was added. After 20 min at 0 °C, the reaction was quenched by slow addition to 60 g of crushed ice. (Caution hydrogen gas evolution ). The mixture was raised to room temperature and separated, and the aqueous layer was extracted with CH2CI2 (4x15 mL). The combined organic extracts were dried (Na2SO4), concentrated in vacuo, and purified (SiO2, 5% EtOAc in hexanes) to afford 0.354 g (86%) of the xanthate. To a solution of the xanthatc (2.95 g, 11.1 mmol) in toluene (100 mL) was added tributyltin hydride (15.2 mL, 56.6 mmol) and 2,2 -azobisisobutyronitrilc (AIBN, 0.109 g, 0.664 mmol). The reaction mixture was then heated to reflux for 1 h. The mixture was cooled, concentrated in vacuo, and purified (SiO2, 100% hexanes to remove tin byproducts, followed by 10% EtOAc in hexanes to elute product) to afford 1.69 g (96%) of the/V-methyl-O-methylamide. 

A solution of this ester (8.35 g, 21.6 mmol, 1.0 equivalents) in tetrahydrofuran (THF 100 mL) was cooled to 0 °C, and pyridinium p-toluenesulfonate (PPTS, 500 mg, 2.00 mmol, 0.1 equivalents) and then 2,2-dimethoxypropane (20.0 mL, 163 mmol, 5.9 equivalents) were added. The cold bath was removed and the mixture was stirred at room temperature for 48 h, quenched with saturated aqueous NaHCOs solution, and extracted with EtOAc. The combined organic layers were washed with brine, dried (Na2SO4), filtered, and concentrated. Purification by chromatography on SiO2 (3% ethyl acetate and 1% triethylamine in hexanes, and then 100% EtOAc) afforded the acetonide and a small amount of starting diol which was re-subjected and purified as above. The two batches were combined to afford naphthalene-2-carboxylic acid 2-[(4S)-2,2- dimethyl-[l,3]dioxan-4-yl]-2-methylpropyl ester (9.140 g, 97%) as a clear colorless syrup. Reference Wipf, P Graham, T. H.,/. Am. Chem. Soc. 2004,126, 15346-15347. 

Figure 4. Size dependence of the mean lifetime (a) and time dispersion parameter (b) of the Er3+ PL in nc-Si/SiC>2 Er structures of type 1 at room (solid circles) and cryogenic (open circles) temperatures. Points at d = 0 correspond to the homogeneous a-SiO2 Er layer (NEr IO20 cm2).

Although the model proposed for porous beds is applicable to porous asbestos diaphragms under static conditions, complications arise during electrolysis. Asbestos fiber consists of —40% SiO2 and —40% MgO. This fiber dissolves readily in acid media while it is resistant to caustic73 at low temperatures. During electrolysis, the magnesium layer is believed to dissolve preferentially on the... 

The influence of the operational parameters, such as electrolyte composition, current density, temperature and substrate material (iron, copper, nickel, graphite), on the quality of the deposited Mo-layers from KF-K2M0O4-SIO2 electrolyte was determined. 

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