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Temperature carrier transport

With the Monte Carlo method, the sample is taken to be a cubic lattice consisting of 70 x 70 x 70 sites with intersite distance of 0.6 nm. By applying a periodic boundary condition, an effective sample size up to 8000 sites (equivalent to 4.8-p.m long) can be generated in the field direction (37,39). Carrier transport is simulated by a random walk in the test system under the action of a bias field. The simulation results successfully explain many of the experimental findings, notably the field and temperature dependence of hole mobilities (37,39). [Pg.411]

Liquids. Many of the CVD reactants are liquid at room temperature, They must be heated to their evaporation temperature and transported into the reaction chamber by a carrier gas, which may be an inert gas such as argon, or another reactant such as hydrogen. If the vapor pressure of the liquid reactant is known, its partial pressure can be calculated and controlled by controlling the rate of flow and the volume of the carrier gas. [Pg.112]

Pingel P, Zen A, Abellon RD, Grozema FC, Siebbeles LDA, Neher D (2010) Temperature-resolved local and macroscopic charge carrier transport in thin P3HT layers. Adv Funct Mater 20 2286... [Pg.63]

Figure 3.4 Typical transient response characteristic for hole carrier transport in a-As2Sc3 at room temperature. The behavior is displayed with both linear (a) and logarithmic (b) axes of current and time. Figure 3.4 Typical transient response characteristic for hole carrier transport in a-As2Sc3 at room temperature. The behavior is displayed with both linear (a) and logarithmic (b) axes of current and time.
Traditionally, charge-carrier transport in pure and doped a-Se is considered within the framework of the multiple-trapping model [17], and the density-of-state distribution in this material was determined from the temperature dependence of the drift mobility and from xerographic residual measurements [18] and posttransient photocurrent analysis. [Pg.50]

A.K. Kapoor, S.C. Jain, J. Poortmans, V. Kumar, R. Mertens, Temperature dependence of carrier transport in conducting polymers Similarity to amorphous inorganic semiconductors, J. Appl. Phys. 92 (2002) 3835. [Pg.160]

Figure 92 Typical transient current pulses for holes in amorphous selenium (see Ref. 422a), illustrating the effect of temperature on the degree of the dispersion in carrier transport. Left linear current (i) and time (t) axes right normalized values in logarithmic axes log(i/io) vs. log(t/t0). The arrows indicate the position of the knee dividing the two regimes of logarithmic dependence. Similar behavior can be observed in organic solids (see e.g. Ref. 422b). Figure 92 Typical transient current pulses for holes in amorphous selenium (see Ref. 422a), illustrating the effect of temperature on the degree of the dispersion in carrier transport. Left linear current (i) and time (t) axes right normalized values in logarithmic axes log(i/io) vs. log(t/t0). The arrows indicate the position of the knee dividing the two regimes of logarithmic dependence. Similar behavior can be observed in organic solids (see e.g. Ref. 422b).

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