Technologies for GaN Surface Emitting Lasers

B1 Optical Gain and Threshold Current Density of GaN-Based VCSELs 

FIGURE 1 The maximum gain of GaN and GaAs as a function of injected carrier density. 

The device diameter defined by the radius of the active region is also a very important parameter for low threshold devices. We have to decrease the diameter to realise a low threshold VCSEL. In 

FIGURE 2 A model of surface emitting lasers considered in this study. 

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C5.5 InGaN/GaN laser diodes grown on 6H-SiC C5.6 Technologies for GaN surface emitting lasers C5.7 Role of defects in GaN-based lasers C5.8 GaN-based UV detectors... 

C5.6 Technologies for GaN surface emitting lasers D THRESHOLD CRITERIA... 

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