Tantalum oxide dielectric constant

Capacitance is related to the area of the plates (yi), the distance between the plates (d), and the dielectric constant (e) of the material between the plates (Figure 2, equation I). The dielectric constant or permittivity of a material is the increased capacitance observed compared to the condition if a vacuum was present between the plates. Common dielectric materials are polystyrene (e = 2.5), mylar (e = 3), mica (e = 6), aluminum oxide (e = 7), tantalum oxide (e = 25), and titania (e = 100). In the Leyden jar the dielectric is silica. 

It is somewhat less corrosion resistant than tantalum, and like tantalum suffers from hydrogen embrittlement if it is made cathodic by a galvanic couple or an external e.m.f., or is exposed to hot hydrogen gas. The metal anodises in acid electrolytes to form an anodic oxide film which has a high dielectric constant, and a high anodic breakdown potential. This latter property coupled with good electrical conductivity has led to the use of niobium as a substrate for platinum-group metals in impressed-current cathodic-protection anodes. 

The crystal structures of both (PPN)[M(CO)6] derivatives have been determined.717 The coordination polyhedron is octahedral (Nb—C 2.098(5) A CNbC 89.2(2)°). The PPN moiety is constrained to be centrosymmetric, and thus linear. These compounds correspond to the lowest oxidation state of niobium and tantalum for which structural data are available. A single v(CO) is found in the IR (1854 and 1852 cm-1 for Nb and Ta respectively). Comparable spectra are observed for Na[M(CO)6] in pyridine, but in solvents of lower dielectric constants such as tetrahydrofuran, additional bands attributed to distortion of the anion by the countercation are observed. [Nb(CO)6] appears to be the most labile carbonyl of the group VA analogs. 

This chapter discusses the preparation of tantalum oxide thin films using the sol-gel method, which we believe is promising as a practical method for producing dielectric thin films whose dielectric constants and breakdown voltages are both comparatively high. Tantalum oxide films are good candidates for insulators in LSI devices, EL devices, and film capacitors [4]. Reports on the for-... 

To obtain a tantalum oxide thin film with a high dielectric constant and favorable breakdown voltage characteristics, it is best to fire the film at 400°C. 

At present, the options for practical application of niobium and titanium oxides in electrolytic capacitors are studied as they are characterized by a high dielectric constant and lower cost than tantalum oxide. Improvement of properties of electrolytic capacitors is carried out along the following lines a significant decrease in the size of capacitors, expansion of boundaries of working temperature ranges, improvement of electric characteristics, an increase in reliability and service life of capacitors under storage and when in operation. 

The absorption of water by polymers is especially suited to the development of a capacitive humidity sensor based on the high dielectric constant of water, since capacitance depends on the area, the thickness, and the dielectric constant of a dielectric. Uptake of water causes an increase in the dielectric constant followed by an increase in capacitance. Polyimide is a suitable sensitive material, but so are certain inorganic ceramics such as AI2O3 [142] and low-density Ta205, which change their capacitance with the formation of water dipoles. Low-density Ta20s layers can be formed by anodic oxidation of sputtered tantalum films, whereas polyimide films are deposited by spin coating and subsequent polymerization. 

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