Switching curves

Fig. 18 Characteristics of Alq3 junctions with a CoFeB/MgO spin injection layer. The resistance switching curve is plotted as a function of applied field for different thicknesses or bias in the top panel, and the TMR ratio is plotted as function of bias, together with the d//dF curve for t = 0 and 2 nm in the bottom panel. The curve for t = 2 nm at 500 mV is included in the top panel. Taken from [23] with permission...

Free-layer switching during the write process can be basically modeled in the Stoner-Wohlfarth coherent-rotation model (Ch. 4), which yields an astroid switching curve [71]. Figure 16(a) shows an ellipsoidal cell, with magnetization M and applied field H. In the Stoner-Wohlfarth approximation, the cell energy per unit volume is... 

A second important aspect of electrochromism is the temporal response under alternating potentials ( 0.55 V). The DG showed sharp and distinct transitions between the colored/oxidized and bleached/reduced state across the entire visible spectrum (Fig. 6.10b). This time-resolved switching behavior was analyzed in more detail at A = 630 nm (Fig. 6.10c). The DG device showed short characteristic response times of 53 ms for the bleaching step and 63 ms for the reverse process, determined by fitting exponential functions to the switching curves. These short response times which are close to video rate (24 frames per second) are enabled by the short ion diffusion distance through the only >= 5 nm thick NiO nanotube wall. 

C.V. Brown, L. Parry-Jones, S.J. Elston and S.J. Wilkins, Comparison of theoretical and experimental switching curves for a zenithally bistable nematic liquid crystal device. Mol. Cryst. Liq. Cryst. 410(1), 417-425, (2004). doi 10.1080/15421400490433451... 

It is established that the first crystals start growing immediately after the appearance of the peak on the switching curves. The repeated switching-on of the current within a short period of time (5-10 s) does not give rise to peak formation. These facts indicate that the crystallization overvoltage is associated with three-dimensional nucleation. Based on the experimental results, we evaluated the crystallization overvoltage due... 

Figure 4,9,8 Switching curves at electrocrystallization of (a) M02C and (b) WjC on the electrodes prepared from (1) Agfa, curve 2) M02C and (b, curve 2) W2C (2) T= 1073 K cathode area 7.5 x 10 cm. (a) Na2WO,f...

A typical switching curve corresponding to carbide electrodeposition onto the native substrate over wide temperature and current-density ranges (973-1173 K, i = 0.02-0.40 A/cm ) indicates the absence of any... 

Figure 4.9.11 Switching curves at W2C electrocrystallization on Ni electrodes (1) without oxide film and (2, 3) with an oxide film. Oxidation time of Ni in air atT= 1273 K is (2) 15 and (3) 30 min...

Fig. 159. Cyclic variation in resistance of Pd capped Gd nanoparticle sample (a) and polycrystalline sample (b) between dihydride (A) and trihydride (B) states. For clarity, the first transition point between A and B shown in the figure is marked as the starting point (t = 0). The inset shows a magnified part of the electrical switching curves [resistance (R) as a function of hydrogen exposure time (t)] for the two films. The values of time required for attaining 90% of the final resistance value from the initial value are marked as vertical dotted lines (Aruna et al., 2004).

The relative proportion of nucleation and domain wall lateral growth is expected to be different for different fields and different materials, but this proportion is extremely difficult to observe directly and most of such detail has been deduced from the switching curve. This is the variation of switching current i, with time when a step field is applied and fairly typically is as depicted in Fig. 5(a). The current observed is the added effect of all the nucleation and wall growth processes which occur between the electrodes. Nuclea-... 

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