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Surface binding energy

The material factor A contains the material parameters and is a description of the number of recoil atoms that can escape from the soUd. In one description (31) (eq. 18), N is the atomic density of target atoms and is the surface binding energy. [Pg.395]

When an impacting particle transfers energy to a near sinface carbon atom in an amount sufficient to overcome the lattice bond energy or surface binding energy, some carbon atoms may be displaced and move in a direction defined by the angle... [Pg.412]

Oil), and of S at (Oll)and(OTT). According to calculated surface binding energies, (/ )-thr may easily be adsorbed only on faces (Oil) and (Oil) and, by symmetry, (S)-thr only on (Oil) and (Oil) indeed, threonine is better bound than even the substrate serine by 3 keal/mol (78). These results fix the absolute chirality of the resolved threonine. [Pg.43]

At low energy, a threshold is observed. This is due to the fact that the surface binding energy barrier has to be overcome for sputtering to occur. An important consequence is that the sputter yield of an oxidized target surface is much smaller than for a metallic surface. [Pg.192]

The non-equilibrium problem is even more complicated. The large particles can have surface binding energy much larger than kT and in this case they neither diffuse nor desorb from the surface. The Random Sequential Adsorption (RSA) model [9] assumes that a particle, which arrives at a random location on a surface, is adsorbed only if there is... [Pg.690]

State of catalyst surface Binding energy (eV) Ru3d5/2 Ols Component Ref. [Pg.261]

Main uncertainties remain in the treatment of compounds and intermixed materials. The main parameter governing sputtering is the surface binding energy which is insufficiently known for mixed materials. [Pg.221]

Fig. 11.12. Energy dependence of the erosion yield Y(Ar+) of physical sputtering of a C H film by Ar+ ions (open symbols) and the yield Y(Ar+ H) for chemical sputtering by a simultaneous flux of Ar+ ions and H atoms (full symbols). The dash-dotted and solid lines are carbon erosion yields from TRIM.SP calculations for the sputtering of carbon by argon ions using a carbon-surface-binding energy of Esb = 0.1 eV and of EBb = 4.5 eV, respectively. The dotted line gives the absolute erosion rate by the applied flux of H atoms only... Fig. 11.12. Energy dependence of the erosion yield Y(Ar+) of physical sputtering of a C H film by Ar+ ions (open symbols) and the yield Y(Ar+ H) for chemical sputtering by a simultaneous flux of Ar+ ions and H atoms (full symbols). The dash-dotted and solid lines are carbon erosion yields from TRIM.SP calculations for the sputtering of carbon by argon ions using a carbon-surface-binding energy of Esb = 0.1 eV and of EBb = 4.5 eV, respectively. The dotted line gives the absolute erosion rate by the applied flux of H atoms only...
Fig. 5. Kinetic energy distributions of SiF4 etch products evolved from a silicon surface exposed to 3-keV Ar+ ions and 5 x 10 SF molecules/cm s, at two surface temperatures, 50 and 100 K. Solid curves represent collision cascade distributions with a surface binding energy (Co) of 0.05 eV. (From Osstra et al., 1986.)... Fig. 5. Kinetic energy distributions of SiF4 etch products evolved from a silicon surface exposed to 3-keV Ar+ ions and 5 x 10 SF molecules/cm s, at two surface temperatures, 50 and 100 K. Solid curves represent collision cascade distributions with a surface binding energy (Co) of 0.05 eV. (From Osstra et al., 1986.)...
Figure 10. Cluster size dependence of the binding energy of an electron in a surface state (n = 1, / = 0) on ( He)jy clusters. The localization threshold is manifested at = 5.7 x 10 and the binding energy increases with increasing the cluster radius R, according to the scaling law [ j(R) — j(oo) (X (R — reaching the flat surface binding energy Es(oo) =—OJ meV... Figure 10. Cluster size dependence of the binding energy of an electron in a surface state (n = 1, / = 0) on ( He)jy clusters. The localization threshold is manifested at = 5.7 x 10 and the binding energy increases with increasing the cluster radius R, according to the scaling law [ j(R) — j(oo) (X (R — reaching the flat surface binding energy Es(oo) =—OJ meV...

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See also in sourсe #XX -- [ Pg.29 , Pg.66 ]




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