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Surface Erosion During Implantation Sputtering

II.2a) Reactive primary ion bombardment Yield enhancement is brought about by direct implantation of a reactive species in the sample by using an O2+ (or 0") or a Cs+ primary beam. Liebl [5] has described the build-up in the surface concentration of implanted species during sputter erosion. After sputtering to a depth of approximately Rp + 2ARp, where Rp is the projected range and p the standard deviation, the sputter rate of previously implanted primary ions will exactly balance the implantation rate. In this steady state situation, an equilibrium surface composition is achieved and the secondary ion yields stabilize. Figure 5 shows that upon commencement of bombard-... [Pg.41]

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Implant surface

Sputtered

Sputtering

Surface erosion

Surfaces implantation

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