Superlattice growth

Fig. 7 RFIEED streak spacing during a-Cr203/(x-Fe203 superlattice growth on a-Al203(0001). The 30 keV beam was aligned parallel to [11 00],...

Le Marrec F, Farhi R, El Marssi M, Dellis JL, Karkut MG, Ariosa D (2000) Ferroelectric PbTiOs/BaTiOs superlattices growth anomalies and confined modes. Phys Rev B 61 R6447... 

Heterostructures and Superlattices. Although useful devices can be made from binary compound semiconductors, such as GaAs, InP, or InSb, the explosive interest in techniques such as MOCVD and MBE came about from their growth of ternary or quaternary alloy heterostmctures and supedattices. Eor the successful growth of alloys and heterostmctures the composition and interfaces must be accurately controlled. The composition of alloys can be predicted from thermodynamics if the flow in the reactor is optimised. Otherwise, composition and growth rate variations are observed... 

The core structure of the 1/2 [112] dislocation is shown in Fig. 4. This core is spread into two adjacent (111) plames amd the superlattice extrinsic stacking fault (SESF) is formed within the core. Such faults have, indeed, been observed earlier by electron microscopy (Hug, et al. 1986) and the recent HREM observation by Inkson amd Humphreys (1995) can be interpreted as the dissociation shown in Fig. 4. This fault represents a microtwin, two atomic layers wide, amd it may serve as a nucleus for twinning. Application of the corresponding external shear stress, indeed, led at high enough stresses to the growth of the twin in the [111] direction. 

Growth of Compound Semiconductors and Superlattices by Organometallic Chemical Vapor Deposition... 

The growth of superlattices Is one of the key Issues In MOCVD reactor analysis and design. In addition to growing highly uniform, pure Aims one must be able to form sharp or accurately graded Interfaces between... 

Figure 9. Streamlines (top) and relative gas phase composition of A1 species (bottom) In a vertical axlsymmetrlc reactor at five different times during growth of an AlAs/GaAs superlattice. Red corresponds to all A1 species, violet to no A1 species. The corner Insert portrays the variation In solid fraction of A1 across the Interface. Buoyancy dominated flow.

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